Results 21 to 30 of about 18,025 (163)

Multi-Field Characterisation of Material Removal Processes in Ultrasonic Magnetorheological Chemical Compound Polishing of GaN Wafers

Micromachines
Gallium nitride (GaN), as the core material of third-generation semiconductors, has important applications in high-temperature, high-frequency, and high-power devices, but its polishing process faces many challenges.
Huazhuo Liang, Wenjie Chen, Youzhi Fu, Wenjie Zhou, Ling Mo, Qi Wen, Dawei Liu, Junfeng He   +7 more
doaj   +1 more source

The effect of mechanical and chemical polishing techniques on the surface roughness of denture base acrylic resins

Saudi Dental Journal, 2010
Smooth polished surface of dental prostheses is important to prevent bacterial colonization and plaque accumulation. The acrylic base of prosthodontic appliances needs to be adjusted by grinding which often alters the surface of the denture base.
Mohammed Q. Al-Rifaiy
doaj   +1 more source

Energy beam-based direct and assisted polishing techniques for diamond: A review

International Journal of Extreme Manufacturing, 2023
Diamond is a highly valuable material with diverse industrial applications, particularly in the fields of semiconductor, optics, and high-power electronics.
Zhuo Li, Feng Jiang, Zhengyi Jiang, Zige Tian, Tian Qiu, Tao Zhang, Qiuling Wen, Xizhao Lu, Jing Lu, Hui Huang   +9 more
doaj   +1 more source

Multi grade polishing pad for sapphire chemical mechanical polishing

Journal of Materials Research and Technology
The synergy between polishing pad and abrasive is the key to material removal in chemical mechanical polishing (CMP). In order to achieve uniform material removal, a new multi gradient polishing pad for sapphire CMP was developed.
Zhaohui Deng, Rongjin Zhuo, Zhongyang Li, Wei Cao, Shangci Huang, Jimin Ge   +5 more
doaj   +1 more source

Optimization of CMP processing parameters for Si based on response surface method

Jin'gangshi yu moliao moju gongcheng, 2022
To improve the polishing efficiency and precision, the optimum processing parameters of Si in the chemical mechanical polishing (CMP) process were analysed by CMP experiments and response surface methodology.
Da BIAN, Enmin SONG, Zifeng NI, Shanhua QIAN, Yongwu ZHAO   +4 more
doaj   +1 more source

Preparation of homogeneous sub-micron cerium oxide polishing powder

Jin'gangshi yu moliao moju gongcheng, 2022
To obtain homogeneous submicron cerium dioxide (CeO2) polishing powder, CeO2 was synthesized by solvothermal reaction using cerium nitrate (Ce(NO3)3·6H2O) as cerium resource and alcohol-water mixed solution as solvent.
Mengjiao DAI, Guomei CHEN, Zifeng NI, Ping ZHANG, Shanhua QIAN, Da BIAN   +5 more
doaj   +1 more source

Preparation and Performance Study of Chemical Mechanical Polishing Slurry for New-type Aluminium Alloy

Chemical Engineering Transactions, 2018
Aluminium alloys are widely used in various industries because of their lightness and easy processing, leading to higher requirements for aluminium alloys in terms of the flatness and finish of aluminium alloy surface.
Yali Zhao, Genjie Yu, Yamin Li, Guixia Wang   +3 more
doaj   +1 more source

Enhancing Slurry Stability and Surface Flatness of Silicon Wafers through Organic Amine-Catalyzed Synthesis Silica Sol

Nanomaterials
The stability of slurries used for chemical mechanical polishing (CMP) is a crucial concern in industrial chip production, influencing both the quality and cost-effectiveness of polishing fluids.
Yi Xing, Weilei Wang, Weili Liu, Zhitang Song   +3 more
doaj   +1 more source

Fenton reaction chemical mechanical polishing liquid composition optimization of polishing GaN wafer

Jin'gangshi yu moliao moju gongcheng, 2022
Aiming at the polishing liquid used for polishing GaN wafers by Fenton reaction CMP, a parameter optimization experiment was carried out with the surface quality as the evaluation index, and the optimal ratio of the polishing liquid components was found ...
Jiewen YAN, Jiabin LU, Yinli HUANG, Jisheng PAN, Qiusheng YAN   +4 more
doaj   +1 more source

Individual and interactive action mechanisms of mechanical, chemical, and electrical factors in Co polishing

Friction
With the continuous miniaturization of integrated circuit (IC) devices, Co is recognized as the most promising alternative to Cu as an interconnecting metal. During IC processing, Co surfaces need to be flattened.
Fangjin Xie, Min Zhong, Wenhu Xu, Jianfeng Chen, Xiaobing Li, Meirong Yi   +5 more
doaj   +1 more source