Results 31 to 40 of about 91,843 (195)

Investigation of the Visible Photocatalytic–Fenton Reactive Composite Polishing Process for Single-Crystal SiC Wafers Based on Response Surface Methodology

open access: yesMicromachines
The third-generation semiconductor single-crystal silicon carbide (SiC), as a typical difficult-to-machine material, improves the chemical reaction rate on the SiC surface during the polishing process, which is key to realizing efficient chemical ...
Zijuan Han   +3 more
doaj   +1 more source

The effect of mechanical and chemical polishing techniques on the surface roughness of denture base acrylic resins

open access: yesSaudi Dental Journal, 2010
Smooth polished surface of dental prostheses is important to prevent bacterial colonization and plaque accumulation. The acrylic base of prosthodontic appliances needs to be adjusted by grinding which often alters the surface of the denture base.
Mohammed Q. Al-Rifaiy
doaj   +1 more source

Multi-Field Characterisation of Material Removal Processes in Ultrasonic Magnetorheological Chemical Compound Polishing of GaN Wafers

open access: yesMicromachines
Gallium nitride (GaN), as the core material of third-generation semiconductors, has important applications in high-temperature, high-frequency, and high-power devices, but its polishing process faces many challenges.
Huazhuo Liang   +7 more
doaj   +1 more source

Multi grade polishing pad for sapphire chemical mechanical polishing

open access: yesJournal of Materials Research and Technology
The synergy between polishing pad and abrasive is the key to material removal in chemical mechanical polishing (CMP). In order to achieve uniform material removal, a new multi gradient polishing pad for sapphire CMP was developed.
Zhaohui Deng   +5 more
doaj   +1 more source

Microscopic mechanism for mechanical polishing of diamond (110) surfaces

open access: yes, 1998
Mechanically induced degradation of diamond, as occurs during polishing, is studied using total--energy pseudopotential calculations. The strong asymmetry in the rate of polishing between different directions on the diamond (110) surface is explained in ...
D. R. Alfonso   +15 more
core   +1 more source

Double-walled carbon nanotube-based polymer composites for electromagnetic protection. [PDF]

open access: yes, 2010
In this paper, we present a microwave absorber based on carbon nanotubes (CNT) dispersed inside a BenzoCycloButenw (BCB) polymer. The high aspect ratio and remarkable conductive characteristics of CNT give rise to good absorbing properties for ...
Bianco   +10 more
core   +2 more sources

Energy beam-based direct and assisted polishing techniques for diamond: A review

open access: yesInternational Journal of Extreme Manufacturing, 2023
Diamond is a highly valuable material with diverse industrial applications, particularly in the fields of semiconductor, optics, and high-power electronics.
Zhuo Li   +9 more
doaj   +1 more source

Influence of roughness on contact interface in fretting under dry and boundary lubricated sliding regimes [PDF]

open access: yes, 2009
This paper presents experimental results of wear process under dry and boundary lubricated metallic (AISI 1034/AISI 52100) contacting bodies with different surfaces morphologies subjected to a wide range of kinematic fretting conditions.
Kubiak, Krzysztof, Mathia, T.G.
core   +1 more source

Preparation and Performance Study of Chemical Mechanical Polishing Slurry for New-type Aluminium Alloy

open access: yesChemical Engineering Transactions, 2018
Aluminium alloys are widely used in various industries because of their lightness and easy processing, leading to higher requirements for aluminium alloys in terms of the flatness and finish of aluminium alloy surface.
Yali Zhao   +3 more
doaj   +1 more source

Optimization of CMP processing parameters for Si based on response surface method

open access: yesJin'gangshi yu moliao moju gongcheng, 2022
To improve the polishing efficiency and precision, the optimum processing parameters of Si in the chemical mechanical polishing (CMP) process were analysed by CMP experiments and response surface methodology.
Da BIAN   +4 more
doaj   +1 more source

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