Results 21 to 30 of about 91,843 (195)

Effect of Hydrogen Peroxide and Oxalic Acid on Material Removal in Al CMP [PDF]

한국정밀공학회지, 2017
Chemical mechanical polishing achieves surface planarity through combined mechanical and chemical means. The role of the chemical reaction is very important in a metal CMP like aluminum.
Jin Yeop Jeong, Hyun Seop Lee, Da Sol Lee, Hae Do Jeong   +3 more
doaj   +1 more source

Advances and challenges in mechanical, chemical and energy-field-assisted polishing techniques for single-crystal and polycrystalline diamonds: a comprehensive review

Materials & Design
Diamond has been extensively applied in optics and semiconductor industries owing to its exceptional physical and chemical properties. For industrial applications, diamond surfaces often demand high precision and minimal damage.
Xu Ling, Zhuo Li, Shajiu Le, Anna Jiang, Yangjian Chen, Baodong Wang   +5 more
doaj   +1 more source

Study on the Electro-Fenton Chemomechanical Removal Behavior in Single-Crystal GaN Pin–Disk Friction Wear Experiments

Micromachines
Electro-Fenton chemical mechanical polishing primarily regulates the generation of hydroxyl radicals (·OH) via the Fenton reaction through an applied electric field, which subsequently influences the formation and removal of the oxide layer on the ...
Yangting Ou, Zhuoshan Shen, Juze Xie, Jisheng Pan   +3 more
doaj   +1 more source

Analysis of Solid and Ionic Surface Reaction Form to Surface Quality when Using Chemical-Mechanical Slurry Polishing

Journal of Machine Engineering, 2022
The process of removing machining residues using chemical-mechanical slurry (CMS) has an important place in the creation of ultra-precise components in optical devices.
Le Anh Duc, Pham Minh Hieu, Nguyen Trong Mai, Thai Van Trong, Nguyen Minh Quang   +4 more
doaj   +1 more source

Facet engineering of ceria and the preferential cleavage-consumption mechanism in chemical mechanical polishing

Journal of Materials Research and Technology
The rational design of high-performance ceria (CeO2) polishing abrasives is largely constrained by the unclear correlation between crystal plane exposure, dynamic oxygen vacancy evolution, and the chemical-mechanical synergistic mechanism during chemical
Xin Li, Mingjian Qiu, Quanmin Zhang, Xu Wang, Yuan Wu, Mitang Wang, Siqingaowa Jin, Wei Bi, Yan Zhao, Wei Zhou, bin Zhang, Dongliang Zhang   +11 more
doaj   +1 more source

Metal matrix syntactic foams produced by pressure infiltration—The effect of infiltration parameters [PDF]

, 2013
Metal matrix syntactic foams (MMSFs) were produced by pressure infiltration. Two parameters of the infiltration process (pressure and time) were varied and the infiltrated length was measured as the function of infiltration parameters in order to get ...
Asthana, Balch, Balch, Bárczy, Castro, Castro, Couteau, Daoud, Daoud, Daoud, Eustathopoulos, Garcia-Cordovilla, Guo, Imre Norbert Orbulov, Jaeger, Jha, Kevorkijan, Kiser, Mondal, Mondal, Mondal, Muscat, Orbulov, Orbulov, Orbulov, Orbulov, Orbulov, Orbulov, Orbulov, Orbulov, Orbulov, Palmer, Peroni, Peroni, Rabiei, Ramachandra, Ramachandra, Rohatgi, Rohatgi, Rohatgi, Rohatgi, Semlak, Suery, Tao, Tao, Tao, Torquato, Trumble, Vendra, Washburn, Wu, Zhang   +51 more
core   +1 more source

Fabrication and evaluation of a CMOS-based energy harvesting chip integrating photovoltaic and thermoelectric energy harvesters

Energy Conversion and Management: X
This study explores the development of an energy harvesting chip (EHC) using a complementary metal oxide semiconductor (CMOS) process, addressing the need for efficient micro-scale energy harvesters in modern electronics.
Zhi-Xuan Dai, Chun-Yu Chen
doaj   +1 more source

Slurry Design for Chemical Mechanical Polishing

KONA Powder and Particle Journal, 2014
Chemical Mechanical Polishing (CMP) process is widely used in the microelectronics industry for planarization of metal and dielectric layers to achieve multi-layer metallization.
G. Bahar Basim, Brij M. Moudgil
doaj   +1 more source

A Systematic Study of the Factors Affecting the Surface Quality of Chemically Vapor-Deposited Diamond during Chemical and Mechanical Polishing

Micromachines
Diamond surfaces must be of high quality for potential use in semiconductors, optical windows, and heat conductivity applications. However, due to the material’s exceptional hardness and chemical stability, it can be difficult to obtain a smooth surface ...
Zewei Yuan, Zhihui Cheng, Yusen Feng
doaj   +1 more source

Mechanics,Mechanisms and Modeling of the Chemical Mechanical Polishing Process [PDF]

, 2002
The Chemical Mechanical polishing (CMP) process is now widely employed in the Integrated Circuit Fabrication. However, due to the complexity of process parameters on the material removal rate (MRR), mechanism of material removal and pattern effect are ...
Chun, Jung-Hoon, Lai, Jiun-Yu, Noh, Kyungyoon, Saka, Nannaji   +3 more
core