Results 121 to 130 of about 1,057 (152)
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Electrocoagulation of chemical mechanical polishing (CMP) wastewater from semiconductor fabrication
Chemical Engineering Journal, 2003Treatment of chemical mechanical polishing (CMP) wastewater is investigated. The CMP wastewater, as obtained from a large semiconductor manufacturer, was characterized by high suspended solids (SS) content, high Nephelometric turbidity unit (NTU), chemical oxygen demand (COD) concentration up to 500 mg/l, copper concentration over 100 mg/l and a milky ...
Chen L Lai, Sheng H Lin
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Novel Use of Surfactants in Copper Chemical Mechanical Polishing (CMP)
MRS Proceedings, 2005AbstractIn this study, the interaction between several kinds of surfactants and copper surface was examined to control the dissolution of copper during CMP. Among those surfactants, sodium dodecylsulfate (SDS), one of the conventional anionic surfactants, showed effective interaction with copper and significantly suppressed the dissolution of the ...
Youngki Hong +3 more
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Mechanisms of the Chemical Mechanical Polishing (CMP) Process in Integrated Circuit Fabrication
CIRP Annals, 2001Abstract A contact mechanics model that describes the polishing mechanisms of copper-patterned silicon wafers in the fabrication of ultra-large-scale integrated (ULSI) circuits is presented. The model explains the die-scale variation of material removal rates due to pattern geometry, and predicts results that are in agreement with experimental ...
Nannaji Saka +3 more
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Materials and Manufacturing Processes, 2014
Silicon substrates are used in optical components for infrared systems and mirror systems. An alternative to processing of optical silicon substrates is chemical mechanical polishing (CMP). The conventional CMP uses a three-body abrasion. In this work, a two-body abrasion CMP, called the fixed abrasive CMP, is performed on silicon substrates ...
Z. W. Zhong +3 more
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Silicon substrates are used in optical components for infrared systems and mirror systems. An alternative to processing of optical silicon substrates is chemical mechanical polishing (CMP). The conventional CMP uses a three-body abrasion. In this work, a two-body abrasion CMP, called the fixed abrasive CMP, is performed on silicon substrates ...
Z. W. Zhong +3 more
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Relating Friction and Processes Development during Chemical — Mechanical Polishing (CMP)
2009Die-scale models of CMP have been previously reported for a number of different CMP processes used in integrated circuit (IC) manufacturing, including oxide, dual material shall row trench isolation, and dual material copper damascene processes. Next generation integrated circuits (IC’s) will require the use of porous dielectric materials with shear ...
Filip Ilie +2 more
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Consumables for the Chemical Mechanical Polishing (Cmp) of Dielectrics and Conductors
MRS Proceedings, 1994ABSTRACTChemical mechanical polishing (CMP) is rapidly becoming the process of choice for planarizing dielectrics in very large scale integrated circuits. In addition, it is being used at an increasing rate in the removal of metals in order to define conducting levels.
Rahul Jairath +4 more
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Use of Malonic Acid in Chemical-Mechanical Polishing ( CMP ) of Tungsten
MRS Proceedings, 1997ABSTRACTThe use of malonic acid as an additive in alumina slurries used for the chemical mechanical polishing ( CMP ) of tungsten has been explored for the reduction of particulate contamination. The principal objective of this work was to delineate conditions under which alumina ...
L. Zhang, S. Raghavan
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Investigation on Surface Hardening of Polyurethane Pads During Chemical Mechanical Polishing (CMP)
Journal of Electronic Materials, 2010Temperature control to stabilize the microscale contact surface between the pad and wafer, especially to prevent pad surface degradation, plays an important role in chemical mechanical polishing (CMP) processing of sub- 50-nm devices. In this work, we investigated the phenomenon of pad surface hardening for various process temperatures and developed an
Ji Chul Yang +3 more
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Microelectronic Engineering, 2007
The key component of ferroelectric random access memory (FeRAM) is a capacitor including a ferroelectric thin film and electrode materials. Platinum is one of the suitable metals which meet requirements such as low resistivity, high thermal stability, and good oxygen resistance. Generally, the ferroelectric and the electrode materials were patterned by
Nam-Hoon Kim +3 more
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The key component of ferroelectric random access memory (FeRAM) is a capacitor including a ferroelectric thin film and electrode materials. Platinum is one of the suitable metals which meet requirements such as low resistivity, high thermal stability, and good oxygen resistance. Generally, the ferroelectric and the electrode materials were patterned by
Nam-Hoon Kim +3 more
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Particle Adhesion and Removal in Chemical Mechanical Polishing and Post‐CMP Cleaning
Journal of The Electrochemical Society, 1999A new model including the effects of polishing pressure and platen speed on particle penetration depth in chemical mechanical polishing (CMP) processes is derived based on the particle adhesion theory, the surface plastic deformation, and the pad‐wafer partial contact.
Fan Zhang +2 more
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