Results 1 to 10 of about 1,091,602 (231)

Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer

open access: yesPhysical Review Materials, 2023
The integration of both optical and electronic components on a single chip, despite several challenges, holds the promise of compatibility with complementary metal-oxide semiconductor (CMOS) technology and high scalability. Among all candidate materials, III-V semiconductors exhibit great potential for optoelectronics and quantum-optics based devices ...
Anagha Kamath   +14 more
semanticscholar   +3 more sources

Ultrahigh-Q optomechanical crystal cavities fabricated in a CMOS foundry [PDF]

open access: yesScientific Reports, 2017
Photonic crystals use periodic structures to create frequency regions where the optical wave propagation is forbidden, which allows the creation and integration of complex optical functionalities in small footprint devices.
Rodrigo Benevides   +4 more
doaj   +2 more sources

Mass-producible and efficient optical antennas with CMOS-fabricated nanometer-scale gap.

open access: yesOptics Express, 2013
Optical antennas have been widely used for sensitive photodetection, efficient light emission, high resolution imaging, and biochemical sensing because of their ability to capture and focus light energy beyond the diffraction limit.
T. J. Seok   +3 more
semanticscholar   +3 more sources

CMOS-Compatible Micro Photovoltaic Generator with Post-Processing Enhanced Optical Absorption [PDF]

open access: yesMicromachines
This work reports the design and realization of a silicon-based micro photovoltaic generator (MPG) fabricated using a standard 0.18 μm complementary metal oxide semiconductor (CMOS) technology.
Hung-Wei Chen   +2 more
doaj   +2 more sources

A Compact and Low-Loss MMI Coupler Fabricated With CMOS Technology

open access: yesIEEE Photonics Journal, 2012
We present the design, fabrication, and measurement of a compact and low-loss multimode interference (MMI) coupler based on the silicon nanowire waveguide.
Zhen Sheng   +8 more
doaj   +2 more sources

A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

open access: yesMicromachines, 2021
CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical ...
Rafel Perelló-Roig   +3 more
doaj   +1 more source

Study on CDM ESD Robustness Among On-Chip Decoupling Capacitors in CMOS Integrated Circuits

open access: yesIEEE Journal of the Electron Devices Society, 2021
The integrated circuit (IC) products fabricated in the scaled-down CMOS processes with higher clock rate and lower power supply voltage (VDD) are more sensitive to the transient/switching noises on the power lines with the parasitic inductance induced by
Yi-Chun Huang, Ming-Dou Ker
doaj   +1 more source

Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

open access: yesIEEE Journal of the Electron Devices Society, 2023
In this study, we experimentally demonstrated concepts for realizing doping-free Tungsten Diselenide (WSe2) complementary metal-oxide-semiconductor (CMOS) inverter by developing alloys and compound metals used as source/drain (S/D) contacts.
Takamasa Kawanago   +8 more
doaj   +1 more source

Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-Q microresonators [PDF]

open access: yesNature Photonics, 2020
Driven by narrow-linewidth bench-top lasers, coherent optical systems spanning optical communications, metrology and sensing provide unrivalled performance. To transfer these capabilities from the laboratory to the real world, a key missing ingredient is
W. Jin   +11 more
semanticscholar   +1 more source

Novel pure‐metal tri‐axis CMOS‐MEMS accelerometer design and implementation

open access: yesMicro & Nano Letters, 2021
This work proposed a pure‐metal, single‐proof‐mass structure fabricated by the standard 0.18 μm one‐poly‐silicon six‐metal (1P6M) CMOS process along with one in‐house post‐CMOS wet‐etching approach.
Jung‐Hung Wen, Weileum Fang
doaj   +1 more source

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