Results 71 to 80 of about 1,091,701 (330)
Responsivity Enhanced NMOSFET Photodetector Fabricated by Standard CMOS Technology
Advances in Condensed Matter Physics, 2015 Increasing the responsivity is one of the important issues for a photodetector. In this paper, we demonstrate an improved NMOSFET photodetector by using deep-n-well (DNW) structure which can improve the responsivity of the photodetector significantly ...
Fuwei Wu, Xiaoli Ji, Feng Yan
doaj +1 more source
CMOS Cell Sensors for Point-of-Care Diagnostics
Sensors, 2012 The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics.
Haluk Kulah, Yekbun Adiguzel
doaj +1 more source
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces [PDF]
, 2015 5noWe propose a new approach to describe in commercial TCAD the chemical reactions that occur at dielectric/electrolyte interface and make the ion sensitive FET (ISFET) sensitive to pH. The accuracy of the proposed method is successfully verified against
Bandiziol, Andrea +4 more
core +1 more source
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
Advanced Functional Materials, EarlyView.In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source
The future is frozen: cryogenic CMOS for high-performance computing
ChipLow temperature complementary metal oxide semiconductor (CMOS) or cryogenic CMOS is a promising avenue for the continuation of Moore's law while serving the needs of high performance computing.
R. Saligram +2 more
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A Memristive Cell with Long Retention Time in 65 nm CMOS Technology
Advanced Electronic Materials, 2023 The memristor, which Leon Chua discovered in 1971 and Hewlett Packard fabricated for the first time in 2008, is still facing many design and fabrication challenges.
Hussein Assaf +4 more
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CMOS level shifters from 0 to 18 V output [PDF]
, 2021 A design methodology for level shifters voltage translators, where the output voltage ranges from 0 to 18 V, and the input voltage ranges from 2 to 5.5 V in a 0.6 lm CMOS-HV technology, is presented. This family of circuits have a special interest in the
Arnaud Maceira, Alfredo +2 more
core
Microsphere Autolithography—A Scalable Approach for Arbitrary Patterning of Dielectric Spheres
Advanced Functional Materials, EarlyView.MicroSphere Autolithography (µSAL) enables scalable fabrication of patchy particles with customizable surface motifs. Focusing light through dielectric microspheres creates well defined, tunable patches via a conformal poly(dopamine) photoresist. Nearly arbitrary surface patterns can be achieved, with the resolution set by the index contrast between ...
Elliott D. Kunkel +3 more
wiley +1 more source
AIP Advances, 2019 This work proposes and demonstrates the concept of a complementary metal-oxide-semiconductor (CMOS)-compatible electrophotonic monolithic refractive index sensor in which a Si-based light source is directly integrated.
A. A. González-Fernández +4 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2019 We have developed a capacitor-less I&F neuron circuit with a dual gate positive feedback fieldeffect transistor (FBFET) and successfully co-integrated FBFET and CMOS in a wafer.
Min-Woo Kwon +4 more
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