Results 81 to 90 of about 1,091,701 (330)

CMOS-compatible self-quenched active recovery (SQUARE) single-photon detector

open access: yesAPL Photonics, 2023
Current CMOS single-photon detectors operating in Geiger mode use passive quenching, yielding slow recovery due to the RC delay. Active quenching of CMOS photon detectors operating in the Geiger mode requires external quenching circuitry that occupies a ...
B. Schuster   +7 more
doaj   +1 more source

New Processes and Technologies to Reduce the Low‐Frequency Noise of Digital and Analog Circuits [PDF]

open access: yes, 2016
The chapter is intended to provide the reader with means to reduce low‐frequency noise in Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET). It is demonstrated that low‐resistivity source and drain electrodes can greatly lower the low‐frequency ...
Gaubert, Philippe, Teramoto, Akinobu
core   +2 more sources

Wafer‐Scale Synthesis of Mithrene and its Application in UV Photodetectors

open access: yesAdvanced Functional Materials, EarlyView.
A controlled tarnishing step on the silver surface precedes the solid‐vapor‐phase chemical transformation into silver phenylselenolate thin films. The approach yields crystals exceeding 1 µm with improved in‐plane orientation. Integration on graphene phototransistors demonstrates high photoresponsivity, positioning mithrene as a promising material for ...
Maryam Mohammadi   +8 more
wiley   +1 more source

A CMOS Time-Resolved Fluorescence Lifetime Analysis Micro-System

open access: yesSensors, 2009
We describe a CMOS-based micro-system for time-resolved fluorescence lifetime analysis. It comprises a 16 × 4 array of single-photon avalanche diodes (SPADs) fabricated in 0.35 μm high-voltage CMOS technology with in-pixel time-gated photon counting ...
Martin D. Dawson   +8 more
doaj   +1 more source

General model and equivalent circuit for the chemical noise spectrum associated to surface charge fluctuation in potentiometric sensors [PDF]

open access: yes, 2020
This paper firstly reports a general and powerful approach to evaluate the power spectral density (PSD) of the surface charge fluctuations, so-called \u201cchemical noise\u201d, from a generic set of reactions at the sensing surface of potentiometric ...
Mele, L. J., Palestri, P., Selmi, L.
core   +1 more source

Three‐dimensional Antimony Sulfide Based Flat Optics

open access: yesAdvanced Functional Materials, EarlyView.
This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang   +18 more
wiley   +1 more source

Single-electron operations in a foundry-fabricated array of quantum dots

open access: yesNature Communications, 2020
Semiconductor spin-qubits with CMOS compatible architectures could benefit from the industrial capacity of the semiconductor industry. Here, the authors make the first steps in demonstrating this by showing single electron operations within a two ...
Fabio Ansaloni   +6 more
doaj   +1 more source

Evaluation of rapid thermal processing systems for use in CMOS fabrication

open access: yesSolid-State Electronics, 2002
Abstract The role of rapid thermal processes (RTP) is evolving to meet the demands of next generation complementary metal oxide semiconductors technology. The purpose of this paper is to describe three modern RTP systems and evaluate them in terms of their process capability on control wafers, throughput, and cost of ownership. Tool A is a RTP system
Department of Materials Science and Engineering, University of Florida, P.O. Box 116400 Rhines Hall, Gainesville, FL 32611-6400, USA ( host institution )   +2 more
openaire   +2 more sources

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling

open access: yesnpj Quantum Information, 2023
For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is a promising candidate for reliable and scalable fabrication.
Bernhard Klemt   +18 more
doaj   +1 more source

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