Image lag optimisation in a 4T CMOS image sensor for the JANUS camera on ESA's JUICE mission to Jupiter [PDF]
, 2018 The CIS115, the imager selected for the JANUS camera on ESA’s JUICE mission to Jupiter, is a Four Transistor (4T) CMOS Image Sensor (CIS) fabricated in a 0.18 µm process.
Allanwood, E. A. H. +6 more
core +1 more source
Form Factor Improvement of Smart-Pixels for Vision Sensors through 3-D Vertically- Integrated Technologies [PDF]
, 2014 While conventional CMOS active pixel sensors embed only the circuitry required for photo-detection, pixel addressing and voltage buffering, smart pixels incorporate also circuitry for data processing, data storage and control of data interchange.
Brea Sánchez, Víctor Manuel +7 more
core +1 more source
Reduction of CMOS Image Sensor Read Noise to Enable Photon Counting
Sensors, 2016 Recent activity in photon counting CMOS image sensors (CIS) has been directed to reduction of read noise. Many approaches and methods have been reported.
Michael Guidash +3 more
doaj +1 more source
Study on Color Information Degradation Induced by γ-ray Radiation in CMOS Cameras
Yuanzineng kexue jishu, 2023 The γ-rays are widely and abundantly present in strong nuclear radiation environments, and when they act on the camera equipment used to obtain environmental visual information on nuclear robots, radiation effects will occur, which will degrade the ...
LI Kunfang1,2,3;FENG Jie1,2,*;WANG Haichuan1,2;LI Yudong1,2,*;WEN Lin1,2;LI Zhenzhe4;GUO Qi1,2
doaj +1 more source
In the quest of vision-sensors-on-chip: Pre-processing sensors for data reduction [PDF]
, 2017 This paper shows that the implementation of vision systems benefits from the usage of sensing front-end chips with embedded pre-processing capabilities - called CVIS.
Brea Sánchez, Víctor +4 more
core +1 more source
Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements [PDF]
, 2010 The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements.
Girard, Sylvain +4 more
core +4 more sources
A Low-Power CMOS Image Sensor With Multiple-Column-Parallel Readout Structure
IEEE Journal of the Electron Devices Society, 2022 This paper presents a low-power multiple-column-parallel (MCP) readout CMOS image sensor (CIS) in terms of its structural features. Because each column in an MCP unit performs analog-to-digital (A/D) conversion sequentially, the columns have their own ...
Jang-Su Hyeon +2 more
doaj +1 more source
Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [PDF]
, 2011 Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines ...
Cervantes, Paola +5 more
core +1 more source
Sensors, 2019 A complementary metal oxide semiconductor (CMOS) image sensor (CIS), using offset pixel aperture (OPA) technique, was designed and fabricated using the 0.11-µm CIS process. In conventional cameras, an aperture is located on the camera lens. However,
Byoung-Soo Choi +6 more
doaj +1 more source
CMOS detectors for space applications: from R&D to operational program with large volume foundry [PDF]
, 2010 Nowadays, CMOS image sensors are widely considered for space applications. The use of CIS (CMOS Image sensor) processes has significantly enhanced their performances such as dark current, quantum efficiency and conversion gain.
Breart de Boisanger, Michel +6 more
core +1 more source