Results 51 to 60 of about 3,832 (187)
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes [PDF]
CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been ...
Allegret, Stephane +5 more
core +1 more source
The use of continuous drop‐based force and energy probing methods is introduced to evaluate in situ chemical degradation of super liquid‐repellent surfaces by caustic liquids. By tracking the velocity of rolling drops and energy dissipation of impacting drops, degradation dynamics are resolved under high spatio‐temporal precision. Using this technique,
Parham Koochak +2 more
wiley +1 more source
Despite significant efforts in developing novel biomaterials to regenerate tissue, only a few of them have successfully reached clinical use. It has become clear that the next generation of biomaterials must be multifunctional. Smart biomaterials can respond to environmental or external stimuli, interact in a spatial‐temporal manner, and trigger ...
Sonya Ghanavati +12 more
wiley +1 more source
Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Cervantes, Paola +7 more
core +1 more source
A high‐capacity polyimide‐linked porous organic polymer (HAT‐PTO) incorporating numerous redox‐active centers is synthesized via a hydrothermal reaction, delivering a high theoretical capacity of 484 mAh g−1. In situ hybridization with carboxyl‐functionalized multiwalled carbon nanotubes enhances conductivity and stability, achieving 397 mAh g−1 at C ...
Arindam Mal +7 more
wiley +1 more source
Pixel design and evaluation in CMOS image sensor technology [PDF]
A chip designed in a 0.18 μm CMOS Image Sensor Technology (CIS) is presented which incorporates different pixel design alternatives for Active Pixel Sensor (APS).
Liñán Cembrano, Gustavo +2 more
core
Dynamic range optimisation of CMOS image sensors dedicated to space applications [PDF]
Nowadays, CMOS image sensors are widely considered for space applications. Their performances have been significantly enhanced with the use of CIS (CMOS Image Sensor) processes in term of dark current, quantum efficiency and conversion gain.
Boucher, Luc +5 more
core +1 more source
Breaking the 2‐nm Barrier in Hard Disk Drives Using Monolayer Amorphous Carbon Overcoats
The rapid growth of AI has increased demand for large‐scale data storage, making HDDs indispensable in data centers. Increasing areal storage density is crucial, but limited by the traditional carbon overcoats (COC). Monolayer amorphous carbon (MAC) offers a superior alternative.
Hongji Zhang +15 more
wiley +1 more source
4H-SiC 64 pixels CMOS image sensors with 3T/4T-APS arrays
For radiation-hardened CMOS image sensors (CIS), 4H-SiC 64 pixel array CIS were developed, and real time imaging with an operation frequency of 30 Hz was demonstrated.
Tatsuya Meguro +5 more
doaj +1 more source

