Results 21 to 30 of about 4,444 (239)
Electron Back Scattering in CNTFETs [PDF]
IEEE Transactions on Electron Devices, 2016 A new non-ballistic analytical model for the intrinsic channel region of MOSFET-like single-walled carbon-nanotube field-effect transistors with ohmic contacts has been developed which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications.
Bejenari, I.M., Claus, M.
openaire +3 more sources
مجلة النهرين للعلوم الهندسية, 2020 This paper introduce a new way to simulate the effect of changing the length and the band gap of the nanotube on the current of carbon nanotube field effect transistors (CNTFET( by using simulation tools: FETToy, CNTFET lab, CNT bands 2.0, since this ...
Khoder Bachour +2 more
doaj +1 more source
Ultra-Low Power 5T-SRAM Cell Design using different CNTFET for exploiting Read/Write Assist Techniques [PDF]
Iranian Journal of Electrical and Electronic Engineering, 2023 In today's technological environment, designing the Static Random Access Memory (SRAM) is most vital and critical memory devices. In this manuscript, two kinds of 5TSRAM are designed using different CNTFET such as Dual-ChiralityGate all around (GAA ...
G. S. Kumar, G. Mamatha
doaj
Data-Driven State Estimation of Carbon Nanotube Field Effect Transistor with Smart RBF Network [PDF]
Journal of Optoelectronical Nanostructures, 2022 Since 1993, Devices based on CNTs have applicationsranging from nanoelectronics to optoelectronics. Thechallenging issue in designing these devices is that thenonequilibrium Green's function (NEGF) method has tobe employed to solve the Schrödinger and ...
Hossein Afkhami +2 more
doaj +1 more source
CNTFET Based OTRA and its Application as Inverse Low Pass Filter [PDF]
International Journal of Electronics and Telecommunications, 2019 Operational Transresistance Amplifier (OTRA) has been a topic of great interest recently. OTRA has proved itself to be an appropriate device for the analog applications.
Dinesh Prasad +4 more
doaj +1 more source
Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance [PDF]
, 2007 Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC characteristics of ...
A. Bournel +26 more
core +2 more sources
A high‐capacity and nonvolatile spintronic associative memory hardware accelerator
IET Circuits, Devices &Systems, Volume 17, Issue 4, Page 205-212, July 2023., 2023 A nonvolatile associative memory based on spintronic synapses utilizing magnetic tunnel junction (MTJ) and carbon nanotube field‐effect transistors (CNTFET)‐based neurons is proposed. The proposed design uses the MTJ device because of its fascinating features, such as reliable reconfiguration and nonvolatility.
Mahan Rezaei +3 more
wiley +1 more source
International Journal of Recent Technology and Engineering, 2019 In this paper, a parameter analysis of CNTFET is presented with different parameters variations such as gate to source voltage vgs, oxide thickness tox, gate oxide dielectric Kox, channel length L, source/drain spacer dielectric constant Kspa ect.
Anitha N, Dr.Srividya P
openaire +2 more sources
Challenges and solutions of working under threshold supply‐voltage, for CNTFET‐based SRAM‐bitcell
IET Circuits, Devices &Systems, Volume 16, Issue 8, Page 569-580, November 2022., 2022 Abstract Recently, several studies were done on SRAM bitcells at different supply‐voltages; upper, near or lower to threshold voltage. To the best of the author's knowledge, none of them discussed at threshold supply‐voltage with proper subthreshold operations and Nano/Pico power‐dissipations, hence this paper decides to investigate challenges and ...
Salimeh Shahrabadi
wiley +1 more source
Electronics Letters, Volume 58, Issue 22, Page 840-842, October 2022., 2022 Abstract Power consumption and performance are the two main concerns in designing pulse‐triggered level‐converting flip‐flops (LCFF). In this letter, through the research on the level conversion circuits, an explicit‐pulsed dual‐edge triggered LCFF based on the carbon nanotubes field‐effect transistors (CNTFETs) is proposed by using the multi‐source ...
Yanyun Dai +4 more
wiley +1 more source