Results 21 to 30 of about 2,007 (192)
Data-Driven State Estimation of Carbon Nanotube Field Effect Transistor with Smart RBF Network [PDF]
Journal of Optoelectronical Nanostructures, 2022 Since 1993, Devices based on CNTs have applicationsranging from nanoelectronics to optoelectronics. Thechallenging issue in designing these devices is that thenonequilibrium Green's function (NEGF) method has tobe employed to solve the Schrödinger and ...
Hossein Afkhami +2 more
doaj +1 more source
CNTFET Based OTRA and its Application as Inverse Low Pass Filter [PDF]
International Journal of Electronics and Telecommunications, 2019 Operational Transresistance Amplifier (OTRA) has been a topic of great interest recently. OTRA has proved itself to be an appropriate device for the analog applications.
Dinesh Prasad +4 more
doaj +1 more source
A high‐capacity and nonvolatile spintronic associative memory hardware accelerator
IET Circuits, Devices &Systems, Volume 17, Issue 4, Page 205-212, July 2023., 2023 A nonvolatile associative memory based on spintronic synapses utilizing magnetic tunnel junction (MTJ) and carbon nanotube field‐effect transistors (CNTFET)‐based neurons is proposed. The proposed design uses the MTJ device because of its fascinating features, such as reliable reconfiguration and nonvolatility.
Mahan Rezaei +3 more
wiley +1 more source
Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance [PDF]
, 2007 Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC characteristics of ...
A. Bournel +26 more
core +2 more sources
Challenges and solutions of working under threshold supply‐voltage, for CNTFET‐based SRAM‐bitcell
IET Circuits, Devices &Systems, Volume 16, Issue 8, Page 569-580, November 2022., 2022 Abstract Recently, several studies were done on SRAM bitcells at different supply‐voltages; upper, near or lower to threshold voltage. To the best of the author's knowledge, none of them discussed at threshold supply‐voltage with proper subthreshold operations and Nano/Pico power‐dissipations, hence this paper decides to investigate challenges and ...
Salimeh Shahrabadi
wiley +1 more source
International Journal of Recent Technology and Engineering, 2019 In this paper, a parameter analysis of CNTFET is presented with different parameters variations such as gate to source voltage vgs, oxide thickness tox, gate oxide dielectric Kox, channel length L, source/drain spacer dielectric constant Kspa ect.
Anitha N, Dr.Srividya P
openaire +2 more sources
Electronics Letters, Volume 58, Issue 22, Page 840-842, October 2022., 2022 Abstract Power consumption and performance are the two main concerns in designing pulse‐triggered level‐converting flip‐flops (LCFF). In this letter, through the research on the level conversion circuits, an explicit‐pulsed dual‐edge triggered LCFF based on the carbon nanotubes field‐effect transistors (CNTFETs) is proposed by using the multi‐source ...
Yanyun Dai +4 more
wiley +1 more source
Tolerant and low power subtractor with 4:2 compressor and a new TG‐PTL‐float full adder cell
IET Circuits, Devices &Systems, Volume 16, Issue 6, Page 437-460, September 2022., 2022 Abstract A new 1‐bit full adder (FA) cell illustrating low‐power, high‐speed, and a small area is presented by a combination of transmission gate (TG), pass transistor logic (PTL), and float techniques. Using the proposed cell, a 4:2 compressor is implemented and its performance is investigated under diverse circumstances of voltage, temperature, and ...
Ayoub Sadeghi +3 more
wiley +1 more source
Impact of SWCNT Band Gaps on the Performance of a Ballistic Carbon Nanotube Field Effect Transistors (CNTFETs) [PDF]
Журнал нано- та електронної фізики, 2017 Band gap is an important property in designing single-walled carbon nanotube (SWCNT) for nanoelectronic devices. This paper describes the impact of SWCNT band gaps on the performance of a ballistic carbon nanotube field effect transistor (CNTFET) using ...
DeviВ Dass, RakeshВ Vaid
doaj +1 more source
LOW LEAKAGE CHARGE RECYCLING TECHNIQUE FOR POWER MINIMIZATION IN CNTFET CIRCUITS
Acta Polytechnica, 2019 Carbon Nanotube Field Effect Transistor (CNTFET) is one of the most promising candidates in the near future for digital design due to its better electrostatics and higher mobility characteristics.
Manickam Kavitha, Alagar M. Kalpana
doaj +1 more source