Results 31 to 40 of about 4,444 (239)

Impact of SWCNT Band Gaps on the Performance of a Ballistic Carbon Nanotube Field Effect Transistors (CNTFETs) [PDF]

open access: yesЖурнал нано- та електронної фізики, 2017
Band gap is an important property in designing single-walled carbon nanotube (SWCNT) for nanoelectronic devices. This paper describes the impact of SWCNT band gaps on the performance of a ballistic carbon nanotube field effect transistor (CNTFET) using ...
DeviВ Dass, RakeshВ Vaid
doaj   +1 more source

LOW LEAKAGE CHARGE RECYCLING TECHNIQUE FOR POWER MINIMIZATION IN CNTFET CIRCUITS

open access: yesActa Polytechnica, 2019
Carbon Nanotube Field Effect Transistor (CNTFET) is one of the most promising candidates in the near future for digital design due to its better electrostatics and higher mobility characteristics.
Manickam Kavitha, Alagar M. Kalpana
doaj   +1 more source

Effect of Phonon Scattering on Intrinsic Delay and Cut-Off Frequency of Carbon Nanotube FETs [PDF]

open access: yes, 2006
The effect of phonon scattering on the intrinsic delay and cut-off frequency of Schottky barrier carbon nanotube (CNT) FETs is examined by self-consistently solving the Poisson equation and the Schrodinger equation using the non-equilibrium Greens ...
Guo, Jing, Ouyang, Yijian, Yoon, Youngki
core   +1 more source

Design and Simulation of an Efficient Quaternary Full-Adder Based on Carbon Nanotube Field Effect Transistor [PDF]

open access: yesInternational Journal of Industrial Electronics, Control and Optimization
The essential reason for implementing multilevel processing systems is to reduce the number of semiconductor elements and hence the complexity of system.
Farzaneh Ahari   +2 more
doaj   +1 more source

Multiplexor 4 x 1 de alto rendimiento basado en un transistor de efecto de campo de nanotubos de carbono de pared simple con lógica de transistor de paso similar a CMOS

open access: yesRevista Ingeniería UC, 2020
En los últimos años, según muchos estudios, el transistor de efecto de campo de nanotubos de carbono (CNTFET) mostró un alto rendimiento en muchos circuitos lógicos debido a sus propiedades y en comparación con otros homólogos de silicio.
Hamed Fooladvand   +2 more
doaj   +1 more source

Comparative Analysis of CNTFET and CMOS Logic based Arithmetic Logic Unit [PDF]

open access: yesЖурнал нано- та електронної фізики, 2017
This paper proposes the novel low power and area efficient ALU (Arithmetic and Logic Unit) using adder and multiplexers. The adder and multiplexer are realized by using CNTFET (Carbon Nano Tube Field Effect Transistor) A verilog model of MOSFET (Metal ...
K.В Nehru   +2 more
doaj   +1 more source

Highly-Efficient CNTFET-Based Unbalanced Ternary Logic Gates

open access: yesECS Journal of Solid State Science and Technology, 2023
A large number of interconnections required to implement a binary logic-based circuit leads to an increase in power/energy consumption and area overhead.
Erfan Abbasian   +2 more
semanticscholar   +1 more source

Novel Ternary Logic Gates Design in Nanoelectronics [PDF]

open access: yes, 2019
In this paper, standard ternary logic gates are initially designed to considerably reduce static power consumption. This study proposes novel ternary gates based on two supply voltages in which the direct current is eliminated and the leakage current is ...
Etezadi, Sajjad, Hosseini, Seied Ali
core   +2 more sources

Design and analysis of energy‐efficient compressors based on low‐power XOR gates in carbon nanotube technology

open access: yesIET Circuits, Devices and Systems, 2022
Compressors are the fundamental components in multipliers to accumulate and reduce partial product stages in a parallel manner. This study presents several architectures for low‐power 4‐2 and 5‐2 compressors, which are based on the proposed circuits of ...
Elmira Tavakkoli, Mahdi Aminian
doaj   +1 more source

Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors [PDF]

open access: yes, 2005
Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering.
Dmitri E. Nikonov   +4 more
core   +4 more sources

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