Results 51 to 60 of about 4,444 (239)

Low Power and Energy‐Efficient Design of MTJ/FinFET Circuits

Engineering Reports, Volume 8, Issue 3, March 2026.
This work begins by outlining the fundamental concepts of MTJs, FinFETs, and the conventional hybrid CMOS/MTJ framework. It then explains the operating mechanism and configuration of the proposed STT‐MTJ/FinFET‐based OR logic gate. The final sections present the simulation outcomes and analyze the influence of FinFET fin variation.
Pillem Ramesh, Atul S. M. Tripathi
wiley   +1 more source

Low power area efficient self-gated flip flop: Design, implementation and analysis in emerging devices

Engineering and Applied Science Research, 2022
This study presents a novel CMOS self-gated flip flop for low power and area efficient applications. The low power operations are achieved by deactivating the clock signal when not required in the circuit.
Owais Ahmad Shah, Geeta Nijhawan, Imran Ahmed Khan   +2 more
doaj  

Sub 20 nm Short Channel Carbon Nanotube Transistors

, 2004
Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic islands ...
Duesberg, G. S., Graham, A. P., Hoenlein, W., Kretz, J., Kreupl, F., Liebau, M., Rajasekharan, B., Seidel, R. V., Unger, E.   +8 more
core   +1 more source

Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors [PDF]

, 2011
The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated.
C. H. de Groot, D. C. Smith, G. Ayre, J. L. Hutchison, P. Ashburn, T. Uchino, Uchino   +6 more
core   +1 more source

Nanoarchitectonics for Non‐Volatile Ternary STDP Synapse Using Anti‐Ferroelectric Carbon Nanotube Devices

Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.
A compact neuromorphic synapse is presented, coupling anti‐ferroelectric capacitors with carbon nanotube devices to realize a non‐volatile, ternary STDP learning circuit. A calibrated compact model employs the negative differential resistance effect for ternary latching in a non‐volatile fashion.
Mohammad Khaleqi Qaleh Jooq, Fereshteh Behbahani, Amirali Amirsoleimani, Mostafa Rahimi Azghadi, Saeed Afshar   +4 more
wiley   +1 more source

Single ended 12T cntfet sram cell with high stability for low power smart device applications

e-Prime: Advances in Electrical Engineering, Electronics and Energy
Static random-access memory (SRAM) is the most prevalent type of memory used in current system-on-chips (SOC). SRAMs built using Complementary metal oxide semiconductor (CMOS) transistors, suffer from low stability and significant power dissipation at ...
S. Jayanthi, P. Raja, M. Elangovan, T.S. Murugesh   +3 more
doaj   +1 more source

Field-effect transistors assembled from functionalized carbon nanotubes

, 2006
We have fabricated field effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing hydroxamic acid functionality.
Appenzeller J., Auvray S., Avouris, Avouris Ph., Bachtold A., Bahr J. L., Banerjee S., Bethune D. S., Bonard J. M., Chen J., Chen Z., Cheng C., Choi K. H., Collins P. G., Cui Y., Dai H., Derycke V., Duan X., Dyke C. A., Folkers J. P., Hannon J. B., Heald C. G. R., Huang Y., Iijima S., Javey A., Jin S., Johnston D. E., Kataura H., Klinke C., Kooi S. E., Lee S. W., Lee Y. S., Lin Y. M., Martel R., McEuen P. L., Mirkin C. A., Morales A. M., Niyogi S., Perebeinos V., Radosavljevic M., Spataru C. D., Wind S. J.   +41 more
core   +1 more source

Best CNTFET Ternary Adders?

, 2021
5 pages, 11 ...
openaire   +2 more sources

A Comprehensive Study of Quantum Transport Effects on Graphene Nanoribbon Field‐Effect Transistors (GNRFET)

Micro &Nano Letters, Volume 21, Issue 1, January/December 2026.
This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
wiley   +1 more source

A Review of Carbon Nanotubes Field Effect-Based Biosensors

IEEE Access, 2020
Field effect-based biosensors (BioFETs) stand out among other biosensing technologies due to their unique features such as real time screening, ultrasensitive detection, low cost, and amenability to extreme device miniaturization due to the convenient ...
S. S. Alabsi, Abdelaziz Yousif Ahmed, J. O. Dennis, M. H. Md Khir, A. S. Algamili   +4 more
doaj   +1 more source