Results 51 to 60 of about 2,007 (192)

An Optimal Gate Design for the Synthesis of Ternary Logic Circuits [PDF]

open access: yes, 2018
Department of Electrical EngineeringOver the last few decades, CMOS-based digital circuits have been steadily developed. However, because of the power density limits, device scaling may soon come to an end, and new approaches for circuit designs are ...
KANG, SEOKHYEONG   +2 more
core   +1 more source

A Comprehensive Study of Quantum Transport Effects on Graphene Nanoribbon Field‐Effect Transistors (GNRFET)

open access: yesMicro &Nano Letters, Volume 21, Issue 1, January/December 2026.
This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
wiley   +1 more source

Single ended 12T cntfet sram cell with high stability for low power smart device applications

open access: yese-Prime: Advances in Electrical Engineering, Electronics and Energy
Static random-access memory (SRAM) is the most prevalent type of memory used in current system-on-chips (SOC). SRAMs built using Complementary metal oxide semiconductor (CMOS) transistors, suffer from low stability and significant power dissipation at ...
S. Jayanthi   +3 more
doaj   +1 more source

Perspective: Organic electronic materials and devices for neuromorphic engineering

open access: yes, 2018
Neuromorphic computing and engineering has been the focus of intense research efforts that have been intensified recently by the mutation of Information and Communication Technologies (ICT). In fact, new computing solutions and new hardware platforms are
Alibart, Fabien   +2 more
core   +2 more sources

Comprehensive performance analysis of CMOS and CNTFET based 8T SRAM cell

open access: yesJournal of Electronic Science and Technology
In recent years, carbon nanotube field effect transistor (CNTFET) has become an attractive alternative to silicon for designing high-performance, highly stable, and low-power static random access memory (SRAM).
Mahamudul Hassan Fuad   +4 more
doaj   +1 more source

From Nano Robotic Manipulation to Nano Manipulation Robot

open access: yesSmartBot, Volume 1, Issue 3, September 2025.
This review addresses a critical research gap by summarizing advancements in nano robotic manipulation, tracing its evolution from passive observation to autonomous nanomanipulation robots. It explores the interplay of observation, construction, and operation, unveiling fundamental principles of atomic‐scale control. The review establishes a systematic
Zhan Yang   +6 more
wiley   +1 more source

A Review of Carbon Nanotubes Field Effect-Based Biosensors

open access: yesIEEE Access, 2020
Field effect-based biosensors (BioFETs) stand out among other biosensing technologies due to their unique features such as real time screening, ultrasensitive detection, low cost, and amenability to extreme device miniaturization due to the convenient ...
S. S. Alabsi   +4 more
doaj   +1 more source

Impact of Scaling Gate Insulator Thickness on the Performance of Carbon Nanotube Field Effect Transistors (CNTFETs) [PDF]

open access: yes, 2013
As scaling down Si MOSFET devices degrade device performance in terms of short channel effects. Carbon nanotube field effect transistor (CNTFET) is one of the novel nanoelectronics devices that overcome those MOSFET limitations. The carbon nanotube field
Devi, Dass   +2 more
core  

Sub 20 nm Short Channel Carbon Nanotube Transistors

open access: yes, 2004
Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic islands ...
Duesberg, G. S.   +8 more
core   +1 more source

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