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Integrated optical phased arrays are emerging as scalable engines for solid‐state beam steering and programmable wavefront control. This Review maps the field from beam‐steering principles and core building blocks to material platforms, system‐level bottlenecks, and application frontiers, highlighting how heterogeneous integration, aperiodic ...
Jingwei Li +7 more
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Cryogenic Etching of the Electroplating Mold for Improved Zone Plate Lenses
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Cryogenic Etching in Advanced Electronics Manufacturing: Applications and Challenges
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Numerical Simulation of Cryogenic Etching: Model with Delayed Desorption
Russian Microelectronics, 2021A numerical model of the evolution of the trench profile during cryogenic etching in SF6/O2 plasma based on the cellular representation of the surface state, the Monte Carlo method for calculating particle fluxes, and the scheme of delayed desorption of reaction products is proposed.
Vladimir Lukichev, Lukichev V F
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Cryogenic etching of deep narrow trenches in silicon
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2000Deep and narrow anisotropic etching of silicon structures has been investigated in a low-pressure high density plasma reactor working with a cryogenic chuck. We have previously demonstrated the feasibility of this technique on such structures. Improvement of etch rate and profiles has been studied and new results show 2 μm wide trenches etched to a ...
Ranson P
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Numerical study of aperture shape effects in deep cryogenic etching of silicon
International Conference on Micro- and Nano-Electronics 2021, 2022Cryogenic etching of silicon in SF6/O2 plasma is the process of choice for fabrication of deep high aspect ratio structures with strict requirements for the sidewall angle, surface roughness and contamination, including MEMS, X-ray optics, and supercapacitors.
Andrey Miakonkikh, Vladimir Lukichev
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HARDWARE DESIGN FOR CRYOGENIC ETCHING EQUIPMENT
Heat Transfer Research, 2021Sang Jeen Hong
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ICP cryogenic dry etching for shallow and deep etching in silicon
SPIE Proceedings, 2009We achieved to etch nano- and deep structures in silicon using ICP-cryogenic dry etching process. We etched nanopores and nanocantilevers with an etch rate of 13 nm/min, nanopillars with an etch rate of 2.8 μm/min - 4.0 μm/min, membrane and cantilever structures with an etch rate of 4 μm/min and 3 μm/min, respectively.
Ü. Sökmen +6 more
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Cryogenic reactive ion etching of silicon in SF6
Applied Physics Letters, 1990Reactive ion etching of Si and SiO2 in SF6 plasmas in which the samples are mounted on a liquid-nitrogen-cooled electrode has been studied. At this temperature SF6 condenses on the electrode surface, but it is possible to maintain a plasma. Si etch anisotropy has been demonstrated at low temperature, in agreement with previous studies.
Tim D. Bestwick +2 more
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Cryogenic electron cyclotron resonance plasma etching
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1992A cryogenic electron cyclotron resonance (ECR) plasma etching system has been built to study wafer temperature in the Si etching characteristics. The wafer temperature was controlled from −150 to +30 °C during etching using the liquid nitrogen cooled helium gas.
Ki Woong Whang +2 more
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