Results 121 to 130 of about 2,906 (237)
steel research international, EarlyView.Tailored heat treatments transform additively manufactured high‐nitrogen martensitic Cr steel from austenitic as‐built condition to high‐hardness states. Isothermal bainitizing at 250°C generates an ultrafine nanostructure and achieves higher hardness than conventional hardening and tempering, highlighting a promising postprocessing route for laser ...
Philip König +2 more
wiley +1 more source
Cryogenic deep reactive ion etching and bonding of through silicon wafer vias
, 2012 Positrons being an antiparticle annihilate upon coming in contact with electrons, which means any form of matter. To store a large number of positrons in one place, a new approach is being followed where thousands of 100 mm or smaller diameter holes are ...
Verma, Ankita
core
NO-driven etching behavior of SiO2 and Si3N4 in cryogenic NF3/NO plasmas
Journal of Applied PhysicsGas composition and substrate temperature play key roles in governing surface reaction pathways and the etching behavior of dielectric films. In this study, the temperature- and composition-dependent etching characteristics of silicon dioxide and silicon nitride films were investigated in cryogenic NF3/NO plasmas, with the aim of clarifying how NO ...
Yoon Joo Jeong +11 more
openaire +1 more source
Gepta‐EX: a multi‐channel germanium detector for X‐ray absorption fine structure
Journal of Synchrotron Radiation, EarlyView.Gepta‐EX is a compact seven‐channel high‐purity germanium detector designed to deliver high‐resolution fluorescence X‐ray absorption fine‐structure measurements at photon energies where silicon detectors become effectively transparent. It provides excellent energy resolution across a broad energy range, avoids silicon escape‐peak artifacts, and offers ...
Abdul K. Rumaiz +6 more
wiley +1 more source
, 2015 International audienceA hybrid Monte Carlo—fluid model is applied to simulate the wafer-temperature-dependent etching of silicon with SF6 inductively coupled plasmas (ICP).
Tinck, Stefan +3 more
core +1 more source
Atomic Layer Etching of SiO2 using CF4 plasma in deposition mode at cryogenic temperature
International audiencePlasma Atomic Layer Etching (ALE) is a sequential process using self-limiting steps to etch a material monolayer by monolayer. SiO2 ALE is usually achieved at room temperature of the substrate by alternating a C4F8/Ar plasma, that ...
Nos, Jack +9 more
core +1 more source
Zhileng xuebao, 2017 The anti-icing performance of a super-hydrophobic surface, which was aluminum-based surface prepared by an etching method, at different substrate temperatures of ﹣15, ﹣20, ﹣25, ﹣30 ℃ for both static and dynamic cryogenic liquid droplets were ...
Wu Weidong +3 more
doaj
Journal of Synchrotron Radiation, EarlyView.Lapped Si(111) crystals in a double‐crystal monochromator provide high‐flux, spectrally pure, and moderate‐bandwidth X‐ray beams at 100 keV, offering a robust and cost‐effective alternative to perfect‐crystal and multilayer optics.Lapping the surfaces of Si(111) crystals in a double‐crystal monochromator significantly increases the intensity of high ...
Hiroshi Yamazaki +3 more
wiley +1 more source
Silicon cryo-etching of deep holes
, 2007 International audienceThe cryogenic process is used to drill 400 um thick silicon wafers. It is first studied on single side masked substrates. Holes of 14 um in diameter are 210 um deep after 30 min, representing an average etch rate as high as 7 um/min.
Mellhaoui, Xavier +5 more
core +1 more source
Application of Multi‐Method Dating for Understanding the Gravettian North of Moravia, Central Europe
Archaeometry, EarlyView.ABSTRACT This article presents the results of integrating three methods to assess the age of the Upper Palaeolithic site of Pietraszyn 11 (SW Poland), close to the Moravian Gate. Sediment chronology determined using optically stimulated luminescence produced promising, yet ambiguous results (51.0 ± 3.7 to 20.3 ± 0.7 ka).
A. Wiśniewski +16 more
wiley +1 more source