Results 131 to 140 of about 169 (158)
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Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process
Microsystem Technologies, 2010We achieved to etch nanostructures as well as structures with high aspect ratios in silicon using an inductively coupled plasma cryogenic deep reactive ion etching process. We etched cantilevers, submicron diameter pillars, membranes and deep structures in silicon with etch rates between 13 nm/min and 4 μm/min.
Ü. Sökmen +7 more
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Damage free cryogenic etching of ultra low-k materials
2013 IEEE International Interconnect Technology Conference - IITC, 2013Cryogenic etching was applied to porous organosilicate (OSG) films. Plasma-induced damage was reduced due to the protective effect of etch by-products condensed in pores of low-k materials. Almost no carbon depletion was observed when the wafer temperature is below a certain critical level. Most of experiments were carried out with SF6 plasma.
Mikhail R. Baklanov +3 more
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Electron cyclotron resonance plasma etching of photoresist at cryogenic temperatures
Journal of Applied Physics, 1992An electron cyclotron resonance oxygen plasma discharge was used to anisotropically etch photoresist at a low substrate temperature (−100 °C). The results of using a lower temperature are seen in a reduction in lateral etch rate, with concomitant improvement in anisotropy.
Walter Varhue +2 more
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Cryogenic etching of nano-scale silicon trenches with resist masks
Microelectronic Engineering, 2011Cryogenic silicon etching using SF"6-O"2 at the sub-50 nm scale has been developed for nano-electromechanical systems (NEMS) and nano-photonics systems where high aspect ratio trenches are desired. It was found that the SF"6-O"2 chemistry at cryogenic temperatures (-100 to -130^oC) provides the best combination of etch rate, selectivity, and profile ...
Y. Wu +6 more
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Cryogenic etching of positively tapered silicon pillars with controllable profiles
Journal of Vacuum Science & Technology BFabrication of high aspect ratio silicon nanopillars is challenging for various applications. A cryogenic silicon etching process using SF6 and O2 plasma is investigated to create silicon nanopillars with 10 μm height and tens of nanometers apex. In the process, fluorine radicals react with silicon atoms, releasing volatile SiFx byproducts and then ...
Xiaoli Zhu +3 more
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Reaction mechanism for HF based cryogenic plasma etching of SiO2
Journal of Vacuum Science & Technology AIn semiconductor device fabrication, increasing the rate and quality of high aspect ratio (HAR) plasma etching is critical for the continuous scaling of three-dimensional (3D) devices. Cryogenic plasma etching (CPE) of SiO2, in which the substrate is cooled to temperatures between −10 and −100 °C, is emerging as a promising approach for achieving high ...
Yeon Geun Yook +3 more
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Cryogenic etching and characterization of nano-sized silicon metadevice
Optics Communications, 2023Jindong Wang +6 more
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Black silicon formation using cryogenic etching and photoresist layer
Была проведена серия экспериментов по разработке технологии плазменного травления черного кремния через слой полидиметилглутаримида (PMGI) фоторезиста. Кремниевые пластины предварительно подвергались жидкой химической обработке. Слой фоторезиста толщиной ~25 нм способствует процессу создания регулярных структур черного кремния на подложках диаметром ...Vyacheslavova, Ekaterina +6 more
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On the low temperature limits for cryogenic etching: A quasi in situ XPS study
Applied Surface Science, 2023Felipe Cemin, Christophe Cardinaud
exaly
CRYOGENIC ATOMIC LAYER ETCH WITH NOBLE GASES
2023GARCIA DE GORORDO ALVARO +3 more
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