Results 91 to 100 of about 189 (135)
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Thermal decomposition of CuInSe2

Journal of the Less Common Metals, 1989
In recent years, the ternary chalcopyrite semiconductor CuInSe 2 has received considerable attention because of its potential for practical use as an effective absorber-generator material in thin film solar cells.
H. Neumann, G. Kühn
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Photoelectrical properties of CuInSe2

Thin Solid Films, 1993
Abstract The steady-state and transient photoconductivity measurements on CuInSe 2 films prepared by solution growth technique have been performed as a function of temperature and illumination intensities. Photo-conductivity is found to increase exponentially with increasing temperature and the photocurrent ( I ph ) obeys a power law: I ph ...
Manohar Lal, Navdeep Goyal, Anil Vohra
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Phase diagram of the Sb2Se3-CuInSe2 pseudobinary system and flux growth of CuInSe2 single crystals

Journal of Materials Science, 2000
The phase diagram of the Sb2Se3-CuInSe2 pseudobinary system is constructed by using differential thermal analysis and X-ray diffraction. Based on the constructed phase diagram, solution growth of CuInSe2 crystals is investigated. The grown crystals are evaluated by X-ray diffraction, electron probe microanalysis, Hall effect and inductively coupled ...
S. Ai, H. Matsushita, A. Katsui
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Features of Bridgman-grown CuInSe2

Thin Solid Films, 2003
Abstract Using a one-ampoule method, ingots of CuInSe 2 were grown by the vertical Bridgman technique with specific nonstoichiometric proportions of the starting elements copper, indium and selenium. With stoichiometry or an excess of selenium, the ingots were p-type.
C.H. Champness, I. Shih, H. Du
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Epitaxial growth of CdS on CuInSe2

Materials Research Bulletin, 1978
Abstract A single-source, vacuum vapor deposition technique was used to grow epitaxial (0001) CdS films on (112) CuInSe 2 single crystal substrates. Highly uniform single crystal CdS films up to 16 μm thick were produced and their quality assessed by x-ray diffraction, scanning electron microscopy, and electrical characterization.
P.W. Li, R.H. Plovnick
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n-CuInSe2 photoelectrochemical cells

Solar Cells, 1986
Abstract The results of a wide research program, aimed at improving the conversion efficiency of n-CuInSe2/liquid electrolyte solar cells, while maintaining the stability exhibited by this material in aqueous polysulfide, are described. Aqueous polyiodide is chosen as the electrolyte, on the basis of comparative studies with a number of aqueous and ...
David Cahen   +6 more
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Properties of the Mo-CuInSe2 interface

Applied Physics Letters, 1982
Mo has been suggested and used as an ohmic back contact for CdS/p-CuInSe2 solar cells. The Mo- p-CuInSe2 interface has been studied for both polycrystalline and single- crystal CuInSe2, using electron beam induced current and capacitance-voltage techniques.
P. E. Russell   +5 more
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EBIC analysis of CuInSe2 devices

Solar Cells, 1988
Abstract This paper describes the electron-beam-induced-current (EBIC) technique and its application to the characterization of CuInSe 2 thin film solar cells. The collected current generated by a scannig electron microscope electron beam can be used to determine spatial non-uniformities, localized defects, p-n junctions, minority carrier lifetimes ...
W. Chesarek   +3 more
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Electrodeposition of CuInSe2 and CuInS2 films

Solar Cells, 1986
Various methods to electrodeposit films of CuInSe(S)2 are discussed. Two basically different methods are treated separately: electrodeposition of the ternary CuInSe(S) systems and deposition of a CuIn alloy followed by annealing in an Se(S)-containing atmosphere.
Gary Hodes, David Cahen
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Transport properties of CuInSe2

Solar Cells, 1986
Abstract The electrical and thermal properties of CuInSe2 single crystals have been reviewed and in some cases, taking into account recently reported experimental values for the transport parameters, earlier results have been re-examined. Based on defect chemistry considerations and the formation energy of the predominant electrically active ...
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