Results 81 to 90 of about 189 (135)
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Solar Cells, 1991
Abstract This paper reviews the status of CuInSe 2 (CIS) module development. The potential of CIS for high power, thin film photovoltaic modules is demonstrated by the achievement of 14.1% active area cell efficiencies and unlaminated module power outputs of 10.5 W (11.2% aperture efficiency) on 940 cm 2 modules and 37.8 W (9.7% aperture efficiency)
K.W. Mitchell +5 more
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Abstract This paper reviews the status of CuInSe 2 (CIS) module development. The potential of CIS for high power, thin film photovoltaic modules is demonstrated by the achievement of 14.1% active area cell efficiencies and unlaminated module power outputs of 10.5 W (11.2% aperture efficiency) on 940 cm 2 modules and 37.8 W (9.7% aperture efficiency)
K.W. Mitchell +5 more
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The lattice constants of CuInSe2
Journal of Electronic Materials, 1985The lattice parameters of stoichiometric CuInSe2 and of several related defect structures grown from off-stoichiometric melt compositions are reported. For CuInSe2 a = 5.814 ± .003 A and c = 11.63 ± 0.04 A corresponding to c/a = 2.000 ± 0.008. The current JPDS data for CuInSe2 represent an average of the lattice constants of off-stoichiometric defect ...
M. L. Fearheiley +4 more
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Solar Cells, 1986
Abstract Spray pyrolysis is a low-cost method of depositing thin films and is an economically attractive alternative to the vacuum deposition methods that have been used to produce stable CuInSe 2 -based solar cells. Thermodynamic studies have shown that the preferred deposit from an aqueous solution of CuCl 2 , InCl 3 and N,N-dimethylselenourea is ...
John B. Mooney, Robert H. Lamoreaux
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Abstract Spray pyrolysis is a low-cost method of depositing thin films and is an economically attractive alternative to the vacuum deposition methods that have been used to produce stable CuInSe 2 -based solar cells. Thermodynamic studies have shown that the preferred deposit from an aqueous solution of CuCl 2 , InCl 3 and N,N-dimethylselenourea is ...
John B. Mooney, Robert H. Lamoreaux
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Photoluminescence studies of CuInSe2
Infrared Physics & Technology, 1996Abstract Photoluminescence measurements have been performed on a p-type CuInSe 2 polycrystalline sample. The dependences of the luminescence spectra on temperature and excitation density are studied in detail. In addition to the observation of donor-acceptor pair emissions at low temperatures, the bound electron-to-localized hole transitions were ...
W.Z. Shen +6 more
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Excitonic luminescence in CuInSe2
Applied Physics Letters, 1998Band-edge luminescence of CuInSe2 single crystals was studied in the temperature region between 2 and 300 K. Sharp emission lines were attributed to the decay of free and bound excitons and their phonon replica. Accurate analysis of the peak position revealed values of 4.4 meV and 1.044 eV for the binding energy of the free exciton and the band gap at ...
J. H. Schön, E. Bucher
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CuInSe2 for photovoltaic applications
Journal of Applied Physics, 1991The properties and most successful methods for producing CuInSe2 films for solar-cell applications are reviewed and the production, analysis, and performance of photovoltaic devices based on CuInSe2 are discussed. The most successful methods for depositing thin CuInSe2 films for high-efficiency solar cells are three-source elemental evaporation and ...
A. Rockett, R. W. Birkmire
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Solar Cells, 1988
Abstract The deposition of CuInSe 2 thin films by co-sputtering from copper and indium planar magnetron sputtering sources in a working gas of argon plus H 2 Se is being investigated. Near-stoichiometric coatings deposited onto glass and molybdenum-coated substrates have been found to have resistivities, Hall mobilities, absorption coefficients ...
John A. Thornton +3 more
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Abstract The deposition of CuInSe 2 thin films by co-sputtering from copper and indium planar magnetron sputtering sources in a working gas of argon plus H 2 Se is being investigated. Near-stoichiometric coatings deposited onto glass and molybdenum-coated substrates have been found to have resistivities, Hall mobilities, absorption coefficients ...
John A. Thornton +3 more
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Solar Cells, 1986
Abstract Epitaxial layers of CuInSe 2 and related mixed crystals were grown on different substrates by liquid phase epitaxy and molecular beam epitaxy but mainly by flash evaporation. The geometrical foundations and experimental results are discussed.
B. Schumann, A. Tempel, G. Kühn
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Abstract Epitaxial layers of CuInSe 2 and related mixed crystals were grown on different substrates by liquid phase epitaxy and molecular beam epitaxy but mainly by flash evaporation. The geometrical foundations and experimental results are discussed.
B. Schumann, A. Tempel, G. Kühn
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Reflectance of CuInSe2 and AgGaS2
Solid State Communications, 1981Abstract The reflectance of the ternary compounds CuInSe2 and AgGaS2 has been measured between 2–7 eV at 80 K and room temperature. For the first time anisotropy in reflection has been observed in CuInSe2. In AgGaS2 the reflectance near the bandgap shows a marked polarization dependence.
J. Austinat +2 more
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Journal of Vacuum Science and Technology, 1981
The oxidation of p-type single-crystal and thin-film polycrystalline CuInSe2 is investigated using complementary Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS). The compositions of the thermally-grown oxides over the 150 °–300 °C temperature range are found to be primarily In2O3 ...
L. L. Kazmerski +5 more
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The oxidation of p-type single-crystal and thin-film polycrystalline CuInSe2 is investigated using complementary Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS). The compositions of the thermally-grown oxides over the 150 °–300 °C temperature range are found to be primarily In2O3 ...
L. L. Kazmerski +5 more
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