Results 61 to 70 of about 189 (135)
Comparative study of structural and optical parameters of CuInSe2 and various CuInxSey compounds
A review of several optical and structural parameters of CuInSe2 (CIS) and various CuInxSey Ordered Defect Compounds (ODC) is presented. These parameters show linear correlation with the composition through the Cu/In atomic ratio. An explanation to such
Leon, Maximo +2 more
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(112) Surface of CuInSe2 Thin Films with Doped Cd Atoms
The doping behavior of Cd atoms in the CuInSe2 thin films and their influences on electronic structures are investigated. The doped Cd atoms replace Cu atoms and prefer to stay at the (112) surface of the thin films.
Bo Yin, Chaogang Lou
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Electrochemical nanostructuring of CuInSe2 bulk crystals
We show that chalcopyrite CuInSe2 crystals can be nanostructured by electrochemical treatment in an aqueous HCl solution. To make the crystals suitable for electrochemical nanostructuring, they are subjected to thermal treatment either in vacuum or in Zn
Ursachi, Veaceslav
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One-step electrodeposited CuInSe2 absorber layers for efficient PV cells
Thin polycrystalline CuInSe2 (CIS) films for photovoltaic (PV) applications were deposited on molybdenum (Mo)-coated soda lime glass substrates by the one-step electrodeposition process.
B. Ndiaye +3 more
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Influence of the Annealing Temperature on optical Properties of (CuInSe2) Thin Films
The Influence of annealing temperature on the optical properties of (CuInSe2) thin films was studied. Thermal evaporation in vacuum technique has been used for films deposited on glass substrates, these films were annealed in vacuum at (100C°, 200C°)
Sabah A. Salman, Muhammad H. Abdalah
doaj
Phase equilibria in the CuInSe2-FeSe-In2Se3 system was studied by methods of differential thermal, X-ray diffraction, microstructural analysis and measurement of microhardness. The projection of liquidus of the ternary system and its isothermal section at 300 K.
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Studies on optical characteristics of CuInSe2 thin films
Bhuiyan Mohammad +3 more
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Optical Applications of CuInSe2 Colloidal Quantum Dots
Song Chen, Bingqian Zu, Liang Wu
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Photoluminescence of CuInSe2/GaN and CuInSe2/InN
Journal of Luminescence, 2019Abstract The power and temperature dependent photoluminescence (PL) of epitaxially grown In-rich CuInSe2 (CIS) and Cu-rich CIS deposited on N-polar GaN and InN were investigated in this paper. The In-rich CIS/GaN has two PL emissions characterized by a donor-acceptor pair (DAP) peak at 0.92 eV and an excitonic peak at 1.08/1.1 eV.
Phoebe Nicole G. Perez +6 more
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Refractive indices of CuInSe2, CuInSe2 and CuGaTe2
Physics Letters A, 1980Abstract Refractive index dispersion in the photon energy range from 0.5 eV to the fundamental gap energy is determined for CuInSe2, CuInTe2 and CuGaTe2 by measuring and analysing optical transmission spectra of thin films. Control measurements on GaAs thin films demonstrate the reliability of the method.
W. Hörig +3 more
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