Results 71 to 80 of about 189 (135)

Optical and electrochemical properties of CuInSe2 and CuInS2-CuInSe2 alloys

Applied Physics Letters, 1985
The fundamental optical transitions in single crystals of CuInS2xSe2−2x alloys have been studied by electrolyte electroreflectance (EER) spectroscopy. The band gap of the alloys increases nonlinearly with increasing sulphur content corresponding to a bowing parameter 0.14.
H. Neff, P. Lange, M. L. Fearheiley, K. J. Bachmann   +3 more
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Hydrogen in CuInSe2

Journal of Physics and Chemistry of Solids, 2003
Abstract The surface of vaccum-cleaved and oxidized CuInSe 2 single crystals with different deviations from ideal stoichiometry and oxidized CuGaSe 2 thin films were exposed to low energy hydrogen ions (300 eV). Besides the removal of surface contaminations within a short exposure time as studied by X-ray photoelectron spectroscopy, this process ...
K. Otte, G. Lippold, H. Neumann, A. Schindler   +3 more
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The role of oxygen in CuInSe2 thin films and CdS/CuInSe2 devices

Solar Cells, 1986
Abstract The solar cell device CdS/CuInSe2 has been shown to require a post-treatment in air at about 200 °C to reach its state-of-the-art efficiency of close to 11%. We have shown that treating the device in a solution of chemical oxidants has the same effect as the annealing in air. The results of oxidation can be reversed by treating the device in
R. Noufi, R.J. Matson, R.C. Powell, C. Herrington   +3 more
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Deposition and characterization of CuInSe2

Renewable Energy, 1995
Abstract Polycrystalline CuInSe 2 thin film solar cells were prepared by two methods: three-source evaporation and co-electrodeposition from a single bath. Structural and compositional characterization was carried out by X-ray diffraction, energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and transmission electron ...
A.G. Chowles, J.H. Neethling, H. Van Niekerk, J.A.A. Engelbrecht, V.J. Watters   +4 more
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Photoelectromagnetic effect in CuInSe2

Journal of Applied Physics, 1977
The photoelectromagnetic effect is studied in single crystals of CuInSe2. A region of light excitation is found in which the dependence of iPEM on light intensity is linear. From the experimental data, a lifetime of the minority carriers τn=0.6×10−9 sec and a surface recombination velocity s=3×105 cm/sec are determined.
S. Mora, N. Romeo
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Junction electroluminescence in CuInSe2

Applied Physics Letters, 1974
We report the first observation of homojunction electroluminescence in a ternary chalcopyrite compound. Diffused junctions in CuInSe2 emit in a narrow band near 1.34 μ with an internal quantum efficiency of ∼10% at 77°K and ∼0.1% at room temperature.
P. Migliorato, B. Tell, J. L. Shay, H. M. Kasper   +3 more
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Degradation and passivation of CuInSe2

Applied Physics Letters, 2012
The degradation of CuInSe2 absorbers in ambient air is observed by the decay of the quasi-Fermi level splitting under well defined illumination with time. The decay is faster and stronger in absorbers with [Cu]/[In]<1 than in ones with a higher ratio. It can be attributed to the oxidation of the sample. Epitaxial films containing no Na show very
REGESCH, David, GUTAY, Levent, LARSEN, Jes K., Deprédurand, Valérie, Tanaka, Daisuke, Yasuhiro, Aida, SIEBENTRITT, Susanne   +6 more
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Metal contacts to CuInSe2

Solar Cells, 1984
Etude par differentes techniques des proprietes d'interfaces entre CuInSe 2 de type et differents metaux (Au, Mo, Ni, Al, Ag, Cu)
R.J. Matson, O. Jamjoum, A.D. Buonaquisti, P.E. Russell, L.L. Kazmerski, P. Sheldon, R.K. Ahrenkiel   +6 more
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Photoconductivity in CuInSe2 films

Solar Energy Materials and Solar Cells, 1994
Abstract CulnSe2 films with different Cu/In ratios (0.4–1.2) were deposited on glass substrates by three source evaporation techniques. The films were polycrystalline in nature with partially depleted grains. Photoconductivity in the films was measured in the temperature range 170–370 K.
R. Pal, K.K. Chattopadhyay, S. Chaudhuri, A.K. Pal   +3 more
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Anion vacancies in CuInSe2

Thin Solid Films, 2001
Abstract Effects of the Cu2–xSe surface phase, the post-growth air-annealing and the Na incorporation on the growth and properties of CuInSe2 films have been systematically investigated by various defect-sensitive characterization techniques such as low temperature photoluminescence and positron annihilation.
S Niki, R Suzuki, S Ishibashi, T Ohdaira, P.J Fons, A Yamada, H Oyanagi, T Wada, R Kimura, T Nakada   +9 more
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