Single-Crystal Diamond Nanowires Embedded with Platinum Nanoparticles for High-Temperature Solar-Blind Photodetector. [PDF]
Lu J +11 more
europepmc +1 more source
Label-free deep UV microscopy in oral cytology: a step towards stain-free diagnostics. [PDF]
Sunny SP +10 more
europepmc +1 more source
Dry Development of Dry Coated Sn-Based Inorganic Resist for Defect-Suppressed and High-Resolution Patterning Process. [PDF]
Kim HJ, Kim MC, Yeom GY.
europepmc +1 more source
Ba<sub>3</sub>Al<sub>2</sub>B<sub>12</sub>O<sub>24</sub>: a beryllium-free member of the Sr<sub>2</sub>Be<sub>2</sub>B<sub>2</sub>O<sub>7</sub> family with a <sup>2</sup> <sub>∞</sub>[B<sub>12</sub>Al<sub>2</sub>O<sub>28</sub>] double-layered structure. [PDF]
Liu X, Wu H, Hu Z, Wang J, Wu Y, Yu H.
europepmc +1 more source
Cavity and waveguide quantum electrodynamics with atoms and optical nanofibers. [PDF]
Webb KE +6 more
europepmc +1 more source
Ultraviolet Sensing-Guided Biomedical Systems: From Label-Free Imaging to Dosimetry and Therapy Feedback. [PDF]
Du H, Wang Y, Zhang R, Olivo M, Bi R.
europepmc +1 more source
Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters. [PDF]
Wang J +11 more
europepmc +1 more source
Related searches:
Abstract Nonlinear optical (NLO) materials with high second‐order nonlinearity are the need of the hour, as they play a key role in frequency conversion, so that coherent radiation in the Ultraviolet (UV) and Deep UV (DUV) (absorption edge<200 nm) region can be achieved.
Anand Sekar +2 more
exaly +2 more sources
Characterization of 248nm Deep Ultraviolet (DUV) Photoresist after Ion Implantation
ECS Transactions, 2009The elemental and structural changes of 248nm DUV photoresist induced by arsenic implantation with high dose and different acceleration energies were studied. For this purpose different analytical techniques were combined. An investigation of the capabilities of the Micro Raman Spectroscopy for analysis of ion implanted photoresist (II-PR) revealed ...
Guy Vereecke +2 more
exaly +2 more sources
AlGaN-based LEDs are expected to be useful for sterilization, deodorization, photochemical applications such as UV curing and UV printing, medical applications such as phototherapy, and sensing. Today, it has become clear that efficient AlGaN-based LED dies are producible between 355 and 250 nm with an external quantum efficiency (EQE) of 3% on flat ...
Hiroshi Amano, Yoshio Honda
exaly +2 more sources

