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Unprecedented Deep Ultraviolet (DUV) Birefringence in Fluorides Constructed from Linear π‐Group Anisotropic Structure Building Units

Angewandte Chemie - International Edition
AbstractAdvancing laser technologies requires maximizing the anisotropy of crystalline media and overcoming current birefringence limitations. We introduce the strategy of linear π group anisotropic structure building units (ABUCB), leading to an unprecedented large birefringence (Δn), a record‐high Δnobv. of 0.152 in sodium bis(dicyanoborato)fluoride (
Yi-Chen Liu, Jingyu Guo, Li-Ming Wu
exaly   +3 more sources

Multidimensional Deep Ultraviolet (DUV) Synapses Based on Organic/Perovskite Semiconductor Heterojunction Transistors for Antispoofing Facial Recognition Systems

Nano Letters
Reliably discerning real human faces from fake ones, known as antispoofing, is crucial for facial recognition systems. While neuromorphic systems offer integrated sensing-memory-processing functions, they still struggle with efficient antispoofing techniques. Here we introduce a neuromorphic facial recognition system incorporating multidimensional deep
Yuanyuan Hu, Huipeng Chen, Lei Liao
exaly   +3 more sources

Progress on pure AlGaN based UVB LEDs and Our Approach Toward Deep-Ultraviolet (DUV) LDs

2021 27th International Semiconductor Laser Conference (ISLC), 2021
M Ajmal Khan   +2 more
exaly   +2 more sources

Portable Deep-Ultraviolet (DUV) Raman for Standoff Detection

Applied Spectroscopy, 2016
Alakai Defense Systems has recently developed a man-portable ultraviolet Raman spectrometer system. The portable Raman improvised explosives detector was designed to provide rapid, standoff detection of chemicals of interest to the end user, including, but not limited to explosives, narcotics, toxic industrial chemicals, and toxic industrial materials.
Adam J, Hopkins   +3 more
openaire   +2 more sources

Characterization of 248nm Deep Ultraviolet (DUV) Photoresist after Ion Implantation

ECS Transactions, 2009
The elemental and structural changes of 248nm DUV photoresist induced by arsenic implantation with high dose and different acceleration energies were studied. For this purpose different analytical techniques were combined. An investigation of the capabilities of the Micro Raman Spectroscopy for analysis of ion implanted photoresist (II-PR) revealed ...
Diana Tsvetanova   +9 more
openaire   +1 more source

ToF–SIMS and XPS study of ion implanted 248nm deep ultraviolet (DUV) photoresist

Microelectronic Engineering, 2011
Arsenic implanted 248nm DUV photoresist films were characterized by ToF-SIMS and XPS analysis methods. The effect of the implant dose and energy on the formation of the crust layer on top of the bulk photoresist was studied. The crust layer thickness was found to be dependent on the implant energy and dose. The elemental and chemical changes induced by
A. Franquet   +7 more
openaire   +1 more source

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