Results 251 to 260 of about 53,870 (328)

Diamond Microstructuring by Deep Anisotropic Reactive Ion Etching

physica status solidi (a), 2018
Fabrication of diamond micro‐patterned structures is a technological challenge due to the outstanding hardness and chemical stability of the material. In this work, the synthetic diamond reactive ion etching (RIE) process is studied. The effects of the gas mixture and bias on the diamond etching rate are investigated.
Anton V. Golovanov, Vitaly S. Bormashov, Nikolay V. Luparev, Sergey A. Tarelkin, Sergey Y. Troschiev, Sergei G. Buga, Vladimir D. Blank   +6 more
openaire   +2 more sources

Deep, vertical etching for GaAs using inductively coupled plasma/reactive ion etching

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2019
Deep etched structures in GaAs have many applications in optoelectronics and MEMS devices. These applications often require an anisotropic etch profile with smooth sidewalls as well as a high etch rate and high aspect ratio. Developing an etch process that demonstrates high selectivity for the etch mask is critical as etch times for deep grooves can be
Katherine Booker, Yahuitl Osorio Mayon, Christopher Jones, Matthew Stocks, Andrew Blakers   +4 more
openaire   +2 more sources

Deep reactive ion etch conditioning recipe

SPIE Proceedings, 2004
Deep Reactive Ion Etch (DRIE) has historically been regarded as a process possessing inherent variable response. These varying responses include etch rate, mask selectivity, etch depth uniformity across the wafer, and the overall profile of the features being etched. Several factors are thought to lend themselves to this observed variation.
Matthew Wasilik, Ning Chen
openaire   +1 more source

In-plane silicon microneedles with open capillary microfluidic networks by deep reactive ion etching and sacrificial layer based sharpening

Sensors and Actuators A: Physical, 2019
The deep reactive ion etching (DRIE) of in-plane silicon microneedles with open capillary microfluidic network is presented. The in-plane needle design allows easy fabrication of long needles for accessing abundant dermal fluids and improves the ...
Yan Li, Hang Zhang, Ruifeng Yang, Fahima Tazrin, Chenxu Zhu, Moufeed Kaddoura, Eric J. M. Blondeel, B. Cui   +7 more
semanticscholar   +1 more source

Deep Reactive Ion Etching of Silicon

MRS Proceedings, 1998
AbstractThe ability to etch deep trenches in silicon while controlling not only the profile of etched features but also the etching rate, uniformity and selectivity enable us to expand the number and scope of MEMS devices. In fact, the increase of MEMS applications in different and varied fields requiring deep silicon etching or high aspect ratio ...
A. A. Ayón, K.-S Chen, K. A. Lohner, S. M. Spearing, H. H. Sawin, M. A. Schmidt   +5 more
openaire   +1 more source

Milestones in deep reactive ion etching

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05., 2005
Deep reactive ion etching (DRIE) has virtually changed MEMS. The basic technology originally developed at Bosch overcomes design restrictions and compatibility problems related to the old wet-etching technology. Today, after a decade of "Bosch DRIE" in the field, a large variety of new MEMS devices is fabricated using this technology, and a broad DRIE ...
F. Laermer, A. Urban
openaire   +1 more source

Ultra Deep Reactive Ion Etching of High Aspect-Ratio and Thick Silicon Using a Ramped-Parameter Process

Journal of microelectromechanical systems, 2018
This paper reports an advanced deep reactive ion etching (DRIE) process for realizing ultra-deep (>500- $\mu \text{m}$ ) and ultra-high aspect-ratio (UHAR) silicon structures (AR > 40 for 1-mm through-trench etch, $\text {AR}\approx 80$ for 500- $\mu ...
Y. Tang, A. Sandoughsaz, K. J. Owen, K. Najafi   +3 more
semanticscholar   +1 more source

Deep reactive ion etching of PMMA

Applied Surface Science, 2004
Abstract The deep reactive ion etching of PMMA in O 2 , O 2 /CHF 3 discharges has been examined as a function of plasma parameters such as pressure, power and relative composition. It is demonstrated that the etching rate initially increases with pressure but decreases after 6.65 Pa.
Congchun Zhang, Chunsheng Yang, Duifu Ding   +2 more
openaire   +1 more source

Deep reactive ion etching of Pyrex glass

Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308), 2002
We have developed a deep reactive ion etching of Pyrex glass in SF/sub 6/ plasma. High etch rate (/spl sim/0.6 /spl mu/m/min) and smooth surface (Ra-4 nm) were achieved at low pressure (0.2 Pa) and high self-bias (-390 V). This result indicates energetic ions for physical sputtering and for enhancing chemical reactions are required to etch materials ...
X. Li, T. Abe, M. Esashi
openaire   +1 more source

Tailoring etch directionality in a deep reactive ion etching tool

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2000
Silicon deep reactive ion etching is a process that produces projected two-dimensional shapes due to the inability to control the direction of the energetic ions arriving at the surface of a wafer. The resulting etched profiles present sidewalls which are nominally 90° to the wafer surface.
A. A. Ayón, S. Nagle, L. Fréchette, A. Epstein, M. A. Schmidt   +4 more
openaire   +1 more source