Results 261 to 270 of about 53,870 (328)

Microfluidic device based on deep reactive ion etching process and its lag effect for single cell capture and extraction

Sensors and Actuators B: Chemical, 2018
We introduced a microfluidic device for high-efficiency single cell capture and their subsequent extraction. It was fabricated by using a deep reactive ion etching process taking advantage of the lag effect.
Jianguo Feng, Z. Fohlerová, Xiaocheng Liu, Honglong Chang, P. Neužil   +4 more
semanticscholar   +1 more source

Reactive ion etching of deep trenches in silicon

SPIE Proceedings, 1992
We have developed a new production technology of deep trenches RIE with a photoresist mask. RIE was performed in a low-pressure batch diode reactor. Wafers were placed on RF (5,28 MHz) electrode covered by organic lacquer. The maximum loading was 24 wafers having a diameter of 100 mm.
Vladimir N. Bliznetsov, Oleg P. Gutshin, V. Yachmenev   +2 more
openaire   +1 more source

Wafer Bevel Protection During Deep Reactive Ion Etching

IEEE Transactions on Semiconductor Manufacturing, 2011
During deep reactive ion etching of silicon used for through silicon via or deep trench isolation processing, the bevel of the wafer is also etched away. The etching of the bevel results in a deep step at the litho edge bead removal or in a degraded bevel shape, source of yield loss or processing issues.
Rémy Charavel, Jaume Roig, Efraín Altamirano-Sanchez, Joke van Aelst, Katia Devriendt, Koen van Wichelen, Pierre Gassot, Peter Coppens, Eddy De Backer   +8 more
openaire   +1 more source

Nanoindentation of crystalline silicon pillars fabricated by soft UV nanoimprint lithography and cryogenic deep reactive ion etching

Sensors and Actuators A: Physical, 2018
Nanomechanical properties of bulk and micro-pillared monocrystalline silicon are experimentally investigated using nanoscale depth-sensing indentation technique.
G. Hamdana, Prabowo Puranto, J. Langfahl-Klabes, Zhi Li, F. Pohlenz, Min Xu, T. Granz, M. Bertke, H. S. Wasisto, U. Brand, E. Peiner   +10 more
semanticscholar   +1 more source

Tapered Deep Reactive Ion Etching: Method and Characterization

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference, 2007
This work presents a method for etching tapered sidewalls in silicon using deep reactive ion etching. The method is based on consecutive switching between anisotropic etching using the Bosch process and isotropic dry etching. By controlling the etch depths of the anisotropic and isotropic etch sessions, the sidewall angle can be controlled over a ...
Niclas Roxhed, Patrick Griss, Goran Stemme   +2 more
openaire   +1 more source

Cyclic deep reactive ion etching with mask replenishment

Journal of Micromechanics and Microengineering, 2007
A multi-step reactive ion etching (MS-RIE) process for silicon was developed for the fabrication of deep anisotropic, closely packed structures with vertical sidewalls. This process used repeated cycles of etching and the replenishment of masking layers, similar to the Bosch process (Laermer and Schilp 1996 US Patent 5,498,312) [1] that is employed in ...
T N Adam, S Kim, P-C Lv, G Xuan, S K Ray, R T Troeger, D Prather, J Kolodzey   +7 more
openaire   +1 more source

Deep reactive ion etching of silicon using an aluminum etching mask

SPIE Proceedings, 2003
A method for fast and efficient deep anisotropic etching of bulk silicon, using a parallel capacitively coupled plasma is presented. The effect of the masking materials and RIE conditions are discussed. Based on the experimental results, a 1000 angstrom thick Al film sufficiently protects the unexposed substrate while allowing the etching of a 350mm ...
null Wei-Chih Wang, J.N. Ho, P. Reinhall
openaire   +1 more source

Deep reactive ion etching for photonic crystals

2021
Photonic crystals are powerful tools to control light by a photonic band gap, analogous to the band gap in semiconductors. A functional class of photonic crystals can be fabricated by etching nanopores in silicon with controlled shape, size and reproducibility. These nanopores are created by deep reactive ion etching.
Goodwin, Melissa Jane, Vos, Willem L., Harteveld, Cornelis A.M.   +2 more
openaire   +1 more source

Investigation of Gaas Deep Etching by Using Reactive Ion Etching Technique

MRS Proceedings, 1991
ABSTRACTRIE is an important technique in obtaining anisotropie etch profile. This is a critical requirement for very deep etching which needs long etch duration. Among many factors which affect RIE characteristics in deep etching, the following are most concerned: (1) the etch mask: needs suitable plasma resistance without significant plasma attack for
Kuen-Sane Din, Gou-Chung Chi
openaire   +1 more source

Deep Reactive Ion Etched Submicron Beam/Trench Characterization

Micro-Electro-Mechanical Systems (MEMS), 2001
Abstract Sub-micron width high aspect ratio beam/trench arrays are etched into silicon substrates using a Surface Technology Systems (STS) deep reactive ion etch (RIE) tool equipped with a time multiplexed plasma etch/passivation cycle scheme.
Gary O’Brien, Xing Cheng, L. J. Guo
openaire   +1 more source