Aspect ratio dependent etching in advanced deep reactive ion etching of quartz
2017 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2017Quartz due to its piezoelectricity and its good temperature stability is one of the most used materials in devices for time-frequency applications. Quartz resonators are generally obtained by chemical etching or chemical mechanical polishing but these two methods do not allow the shrinking of the dimensions of the devices and limit reachable geometry ...
P. Chapellier +5 more
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Micromachined Faraday cup array using deep reactive ion etching
Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090), 2002A micromachined Faraday cup array (MFCA) for position sensitive ion detection has been developed using a deep reactive ion etching (DRIE) process. Linear, closely spaced arrays of 64, 128, and 256 cups have been produced with pitches of 250 /spl mu/m and 150 /spl mu/m.
Robert B Darling +3 more
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DEEP REACTIVE ION ETCHING FOR PILLAR TYPE NANOPHOTONIC CRYSTAL
International Journal of Nanoscience, 2005Experimental results and techniques developed for time multiplexed deep reactive ion etching of nano-photonic crystals are presented. Specifically, the high aspect ratio pillar type two-dimensional photonic crystal (PhC) structure on silicon is fabricated and studied for its high potential in application to lightwave circuits and also for discussion ...
SELIN H. G. TEO +5 more
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Deep reactive ion etching of through silicon vias
2008This chapter contains sections titled: • Introduction• DRIE Equipment and Characterization• DRIE Processing• Practical Solutions in Via Etching• Concluding Remarks• Appendix A: Glossary of Abbreviations• Appendix B: Examples of DRIE Recipes ...
Roozeboom, Fred +9 more
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Deep reactive ion etching for lateral field emission devices
IEEE Electron Device Letters, 2000The authors describe the design, fabrication and testing of lateral field emission diodes utilizing the deep reactive ion etch (DRIE). Devices were fabricated on silicon-on-insulator (SOI) wafers of varied thickness, by etching the device silicon in the STS DRIE system in a single mask process.
V. Milanovic +7 more
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Spatial variation of the etch rate for deep etching of silicon by reactive ion etching
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1997The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6−O2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber.
Bo Asp Mo/ller Andersen +2 more
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Deep Vertical Etching of Silicon Wafers Using a Hydrogenation-Assisted Reactive Ion Etching
Journal of Microelectromechanical Systems, 2007A novel hydrogenation-assisted deep reactive ion etching of silicon is reported. The process uses sequential hydrogen-assisted passivation and plasma etching at low-density plasma powers to stimulate the vertical removal of the exposed Si substrate.
Amir Sammak +4 more
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Deep reactive ion etching and focused ion beam combination for nanotip fabrication
Materials Science and Engineering: C, 2006Abstract We have studied the fabrication of high-aspect ratio silicon tips by a combination of deep reactive ion etching and focused ion beam. The reactive ion etching is used to obtain so-called “rocket tips” which can be fabricated with a high aspect ratio.
G. Villanueva +6 more
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Integrating QSAR modelling and deep learning in drug discovery: the emergence of deep QSAR
Nature Reviews Drug Discovery, 2023Artem Cherkasov +2 more
exaly
Fabrication of Novel MEMS Microgrippers by Deep Reactive Ion Etching With Metal Hard Mask
Journal of microelectromechanical systems, 2017A. Bagolini +5 more
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