Results 251 to 260 of about 2,937,719 (310)
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Microelectronic Engineering, 2018
For developing a heat dissipation system for power devices, room-temperature bonding of a single-crystal diamond chip to a Si substrate was performed using the atomic diffusion bonding (ADB) method.
T. Matsumae +4 more
semanticscholar +1 more source
For developing a heat dissipation system for power devices, room-temperature bonding of a single-crystal diamond chip to a Si substrate was performed using the atomic diffusion bonding (ADB) method.
T. Matsumae +4 more
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Diffusion doping in quantum dots: bond strength and diffusivity
Nanoscale, 2017Semiconducting materials uniformly doped with optical or magnetic impurities have been useful in a number of potential applications. However, clustering or phase separation during synthesis has made this job challenging. Recently the "inside out" diffusion doping was proposed to be successful in obtaining large sized quantum dots (QDs) uniformly doped ...
Avijit, Saha +5 more
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1991
There is currently great interest in the process of diffusion bonding. The main thrust has been in the joining of advanced materials such as superplastic alloys, metal matrix composites and ceramics and, most importantly, to introduce the process into mass-production operations.
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There is currently great interest in the process of diffusion bonding. The main thrust has been in the joining of advanced materials such as superplastic alloys, metal matrix composites and ceramics and, most importantly, to introduce the process into mass-production operations.
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Diffusion Bonding — An Overview
1991Diffusion bonding is a microdeformation solid phase process finding application in niche areas. The mechanisms of bonding are generally understood, and data on modelling is available although limited to simple metal systems.
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Low-Pressure Diffusion Bonding of Titanium
Journal of Spacecraft and Rockets, 1978This paper describes a new manufacturing process for diffusion bonding of titanium alloys. The technique requires the use of high-vacuum furnaces, but allows bonding to be carried out at very low contact pressures. This is possible because the parts are kept separate during outgassing through the innovative use of glass tooling.
J. KENNEY, C. DEMINET
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2010
Abstract The goals of modeling diffusion bonding can be regarded as twofold: to optimize the selection of the process variables for a given material and to provide an understanding of the mechanisms by which bonding is achieved. This article describes the existing models of diffusion bonding with an assumption that the surfaces to be ...
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Abstract The goals of modeling diffusion bonding can be regarded as twofold: to optimize the selection of the process variables for a given material and to provide an understanding of the mechanisms by which bonding is achieved. This article describes the existing models of diffusion bonding with an assumption that the surfaces to be ...
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SITE- AND BOND-DIFFUSION ON REGULAR LATTICES
International Journal of Modern Physics B, 2009We consider two types of motion, one with particle occupying only the sites on a given regular lattice and another when the bonds between neighboring lattice sites are displaced to the positions of the neighboring bonds. We refer to these models as site- and bond-diffusion.
Basnarkov, Lasko, Urumov, Viktor
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Diffusion bonding between TZM alloy and WRe alloy by spark plasma sintering
Journal of Alloys and Compounds, 2018Successful solid-state diffusion bonding was achieved between TZM alloy and WRe alloy without interlayers using spark plasma sintering (SPS) in the temperature range of 1300–1600 °C for 30 min.
Yang Zhi +10 more
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Diffusion bonding: development of theoretical model
Metal Science, 1984In previous work, a theoretical model for solid state diffusion bonding was described. The vapor phase mass transport rate equations are now derived. In addition, a revised model is presented for the power law creep mechanism based on considerations of the elastic and plastic deformation of a long triangular ridge.
Derby, B.; id_orcid 0000-0001-5753-0166 +1 more
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Vacuum, 2018
TC4 titanium alloy was joined with Ni80Cr20 alloy by vacuum diffusion bonding at 950 °C without interlayer. Results indicate that interfacial reaction layer is composed of TiNi, Ti2Ni, Ti(Ni, Cr)3+Crss, and Ti(Al, Ni)s. A higher diffusion rate of Ni than
Kun Liu, Ya-jiang Li, Juan Wang
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TC4 titanium alloy was joined with Ni80Cr20 alloy by vacuum diffusion bonding at 950 °C without interlayer. Results indicate that interfacial reaction layer is composed of TiNi, Ti2Ni, Ti(Ni, Cr)3+Crss, and Ti(Al, Ni)s. A higher diffusion rate of Ni than
Kun Liu, Ya-jiang Li, Juan Wang
semanticscholar +1 more source