Results 101 to 110 of about 22,091 (247)

Flat Bands Induced by Non‐Collinear Antiferromagnetism in CoBi2Te4

open access: yesAdvanced Science, EarlyView.
Flat bands emerge at the edges of intrinsically non‐collinear antiferromagnetic CoBi2Te4 two‐septuple layers through the interplay of spin–orbit coupling–driven band inversion and non‐collinear antiferromagnetism, uncovering a previously unexplored mechanism for flat‐band formation and opening new opportunities for strongly correlated quantum states ...
Ziyuan Zhao   +4 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

open access: yesAdvanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Exceptional Antimodes in Multi‐Drive Cavity Magnonics

open access: yesAdvanced Electronic Materials, EarlyView.
Driven‐dissipative cavity‐magnonics provides a flexible platform for engineering non‐Hermitian physics such as exceptional points. Here, using a four‐port, three‐mode system with controllable microwave interference, antimodes and coherent perfect extinction (CPE) are realized, enabling active tuning to antimode exceptional points.
Mawgan A. Smith   +4 more
wiley   +1 more source

Regulation of Dishevelled DEP domain swapping by conserved phosphorylation sites. [PDF]

open access: yesProc Natl Acad Sci U S A, 2021
Beitia GJ   +5 more
europepmc   +1 more source

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci   +6 more
wiley   +1 more source

Robustness of Half‐Metallicity and Spin‐Dependent Transport in Defective Co2HfSn and Co2ZrSn Heusler Alloys

open access: yesAdvanced Electronic Materials, EarlyView.
Point defects strongly influence the spin‐dependent electronic and transport properties of Co2HfSn and Co2ZrSn Heusler alloys. First‐principles calculations reveal that Co vacancies preserve half‐metallicity, while anti‐site and swap defects introduce minority‐spin states that reduce spin selectivity.
Alessandro Difalco   +5 more
wiley   +1 more source

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