Results 101 to 110 of about 18,499 (235)
cell transistor for future DRAM technology
, 2020 A novel 4F(2) dynamic random access memory (DRAM) cell transistor structure was proposed that can solve various process problems and special failure modes that caused by floating body.
Sungmin Hwang +7 more
core +1 more source
Environmental Microbiology Reports, Volume 18, Issue 3, June 2026.Metagenomic assessment of viromes at two sites in Laguna Madre, a hypersaline estuary, showed unique viral communities. Extreme cold temperature changes showed a greater propensity to enrich AMGs toward oxidative phosphorylation and sulfur metabolism. Extreme shifts in salinity led to homogenized viral taxonomic groups more similar to those typically ...
Jordan R. Walker +3 more
wiley +1 more source
Design of Processing-“Inside”-Memory Optimized for DRAM Behaviors
IEEE Access, 2019 The computing domain of today's computer systems is moving very fast from arithmetic to data processing as data volumes grow exponentially. As a result, processing-in-memory (PIM) studies have been actively conducted to support the data processing in or ...
Won Jun Lee +5 more
doaj +1 more source
One electron-controlled multiple-valued dynamic random-access-memory
AIP Advances, 2016 We propose a new architecture for a dynamic random-access-memory (DRAM) capable of storing multiple values by using a single-electron transistor (SET).
H. W. Kye +7 more
doaj +1 more source
One Health & Risk Management, 2023 Introducere. La nivel global se constată lipsa serviciilor sigure de gestionare a deșeurilor rezultate din activități medicale (DRAM), în special în țările cu venituri mici şi medii.
Luminița GUȚU +6 more
doaj
RAIDR: Retention-aware intelligent dram refresh
, 2012 Dynamic random-access memory (DRAM) is the building block of modern main memory systems. DRAM cells must be periodically refreshed to prevent loss of data.
Onur Mutlu +3 more
core +1 more source
DRAM-Profiler: An Experimental DRAM RowHammer Vulnerability Profiling Mechanism
CoRRRowHammer stands out as a prominent example, potentially the pioneering one, showcasing how a failure mechanism at the circuit level can give rise to a significant and pervasive security vulnerability within systems. Prior research has approached RowHammer attacks within a static threat model framework.
Ranyang Zhou +5 more
openaire +2 more sources
Rowhammer Attacks in Dynamic Random-Access Memory and Defense Methods
SensorsThis paper provides a comprehensive overview of the security vulnerability known as rowhammer in Dynamic Random-Access Memory (DRAM). While DRAM offers many desirable advantages, including low latency, high density, and cost-effectiveness, rowhammer ...
Dayeon Kim +6 more
doaj +1 more source
DRAM 產業十年興衰 – 探索日本企業管理困境與全球競合趨勢
, 2007 DRAM產業十年興衰 – 探索日本企業管理困境與全球競合趨勢 論文摘要 一九九五年前後，日本NEC、東芝、日立、富士通、三菱等機電集團，雄霸全球DRAM（動態隨機存取記憶體）市場，這些日系產業巨擘，擁有技術、品牌、資金、經驗、市占率和人才等經略市場的成功要件，也確實在一九九O年前半葉火紅的DRAM市場上呼風喚雨。那麼，為何在十年之間，整個日本DRAM產業土崩瓦解，僅存爾必達（Elpida）獨撐大局，全球市佔率更萎縮到10%以下？這是筆者投身半導體業之後經常自問的疑惑 ...
Tang, Jonq-Ming, 譚仲民
core
Вестник восстановительной медициныINTRODUCTION. Diastasis rectus abdominis (DRAM) is a pathologic condition of connective and muscular tissue in which there is thinning and stretching of the white line of the abdomen.
Marine Kh. Ghukasyan, Irina N. Bakay
doaj +1 more source