Results 111 to 120 of about 97,626 (219)

Engineering Metastability in Atomic Layer Deposition: Polymorph and Valence Control

open access: yesSmall, Volume 22, Issue 14, 6 March 2026.
This work presents strategies for stabilizing two types of metastable phases: structural polymorphs and multivalence states via ALD. These approaches focus on lowering the energy barriers required for metastable phase formation, enabling access to metastable states beyond the thermodynamic limits imposed by the low‐temperature conditions of ALD.
Jihoon Jeon   +4 more
wiley   +1 more source

Implementation and Optimization of a Random Illumination Microscope: towards Robustness for Microscopy Core Facility

open access: yesBiology of the Cell, Volume 118, Issue 3, March 2026.
We present the implementation of our RIM prototype within a microscopy core facility. We describe the system setup, characterization, and optimization, and, as a proof of concept, we provide biological examples demonstrating the prototype's performance, here in resolving microvilli brush border intestine in adult C. elegans.
Nina Soler   +13 more
wiley   +1 more source

Nonlinear Variation Decomposition of Neural Networks for Holistic Semiconductor Process Monitoring

open access: yesAdvanced Intelligent Systems
Artificial intelligence (AI) is increasingly used to solve multi‐objective problems and reduce the turnaround times of semiconductor processes. However, only brief AI explanations are available for process/device/circuit engineers to provide holistic ...
Hyeok Yun   +11 more
doaj   +1 more source

DRAM-Profiler: An Experimental DRAM RowHammer Vulnerability Profiling Mechanism

open access: yes
RowHammer stands out as a prominent example, potentially the pioneering one, showcasing how a failure mechanism at the circuit level can give rise to a significant and pervasive security vulnerability within systems. Prior research has approached RowHammer attacks within a static threat model framework.
Zhou, Ranyang   +5 more
openaire   +2 more sources

Hybrid-gate MoS<sub>2</sub> 2T0C DRAM for low-power multi-bit storage with high linearity. [PDF]

open access: yesNatl Sci Rev
Zhang Z   +23 more
europepmc   +1 more source

High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs. [PDF]

open access: yesNat Commun
Liao F   +27 more
europepmc   +1 more source

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