Development of advanced GaAs nanostructures by droplet epitaxy
In the field of nanotechnology, a wide area of research is devoted to the studies about the self-assembly of semiconductor quantum nanostructures. Upon special conditions, semiconductor crystals spontaneously aggregate in nanometre sized clusters, which show unusual electronic and optical properties, thanks to their reduced dimension. Understanding the
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Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature. [PDF]
Benyoucef M +6 more
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Lithography-free, site-controlled germanium quantum dots in silicon nanowires for single-hole transistors operating up to 50 K. [PDF]
An J +7 more
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Engineering Nanohole-Etched Quantum Dots for Telecom-Band Single-Photon Generation. [PDF]
Masson IM +7 more
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Efficient single-photon emission via quantum-confined charge funneling to quantum dots. [PDF]
Park S +15 more
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Interfaces in Epitaxially Grown Zn<sub>3</sub>P<sub>2</sub> Nanowires and Their Composition-Dependent Optoelectronic Properties for Photovoltaic Applications. [PDF]
Escobar Steinvall S +9 more
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Solid-state single-photon sources operating in the telecom wavelength range. [PDF]
Holewa P +5 more
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Enhanced Photon Extraction through Optimized Waveguide Geometry for Zincblende InAsP/InP Nanowire Quantum Dots Emitting in the Telecom Range. [PDF]
Bucci G +7 more
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