Results 141 to 150 of about 838 (183)
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Coupled quantum dot–ring structures by droplet epitaxy
Nanotechnology, 2011The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface.
SOMASCHINI, CLAUDIO +3 more
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The structural symmetry of nanoholes upon droplet epitaxy
Nanotechnology, 2021Abstract Nanoholes obtained by droplet epitaxy has been intensively investigated as an important material platform for the fabrication of nanodevices due to their unique topology. However, the final fabricated nanoholes are very difficult to achieve a highly symmetric circular structure, and usually have two or four gaps in the ...
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Semiconductor quantum nanostructures by droplet epitaxy
SPIE Proceedings, 2012Droplet Epitaxy is a variant of molecular beam epitaxy for the fabrication of quantum nanostructures with highly designable shapes and complex morphologies. With Droplet Epitaxy it is possible to combine different quantum structures, namely quantum dots, quantum rings and quantum disks into a single unit, thus allowing an unprecedented control over ...
SANGUINETTI, STEFANO +2 more
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Droplet Epitaxy of Nanostructures
2018The droplet epitaxy is an innovative growth method, performed in the molecular beam epitaxy environment, for the fabrication of quantum nanostructures with highly designable shapes and complex morphologies. Droplet epitaxy is based on the split of the deposition of III and V column elements at controlled temperatures and fluxes.
Sanguinetti S., Bietti S., Koguchi N.
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Origin of Quantum Ring Formation During Droplet Epitaxy
Physical Review Letters, 2013Droplet epitaxy of GaAs is studied in real time using in situ surface electron microscopy. The resulting movies motivate a theoretical model for quantum ring formation which can explain the origin of nanoscale features such as double rings observed under a variety of experimental conditions. Inner rings correspond to GaAs deposition at the droplet edge,
Z. Y. Zhou +4 more
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Growth of topological insulator nanoparticles by droplet epitaxy
Low-Dimensional Materials and Devices 2021, 2021Topological insulators (TIs) are a class of materials which exhibit unique electronic states delocalized on the outer surface of the material. Due to the strong spin-orbit coupling in TIs, these states are spin-polarized and robust against scattering. The robust nature of these states could present a potential solution to the problem of decoherence in ...
Sivakumar Vishnuvardhan Mambakkam +1 more
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Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy
Applied Physics Letters, 2011Self-assembly of bismuth droplets at nanoscale on GaAs(100) surface using molecular beam epitaxy was demonstrated. Fine control of density and size was achieved by varying growth temperature and total bismuth deposition. Droplet density was tuned by roughly 3 orders of magnitude, and the density-temperature dependence was found to be consistent with ...
C. Li +9 more
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Coupled quantum nanostructures formed by droplet epitaxy
Thin Solid Films, 2006We demonstrate self-assembly of GaAs double quantum dots (DQDs) by droplet epitaxy in a lattice-matched system in addition to concentric quantum double rings (CQDRs). The growth mechanism of these complex nanostructures is understood by taking into account the two crystallization processes; the counter-migration (of Ga and As atoms)-induced ...
T. Mano +3 more
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Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy
Japanese Journal of Applied Physics, 2002Epitaxial Ge films were prepared by pulsed laser ablation (PLA) using molten Ge droplets on Si substrates [Yamada et al.: Jpn. J. Appl. Phys. 39 (2000) L278]. To confirm liquid-phase-epitaxy (LPE)-like growth with molten Ge droplets, the droplet temperatures during the flight and the cooling process on the Si substrate were simulated. It was found that
Shigeru Ohtsubo +4 more
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Fabrication of InAs nanoscale rings by droplet epitaxy
Journal of Crystal Growth, 2013Abstract We fabricated InAs nanoscale rings on InP substrates by droplet epitaxy. The rings were formed on an InGaAs layer with a thickness of d ( d =0, 3, 4, and 10 nm), below which a 10-nm-thick InAlAs layer was deposited. While the ring was closed when d =10 nm, it was of C-shape when d =3 and 4 nm.
T. Noda +4 more
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