Results 151 to 160 of about 838 (183)

On Droplet Epitaxy of InGaP Nanostructures

Materials Science Forum
Semiconductor nanostructures are referred to semiconductor heterostructures confined in one, two, or all three dimensions, which are known as quantum wells, quantum wires, and quantum dots (QDs), respectively. QDs are semiconductor nanocrystals with significant potential for high-performance photonic and electronic devices based on III–V semiconductor ...
Tinatin Laperashvili, Orest Kvitsiani
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Evolution of InAs nanostructures grown by droplet epitaxy

Applied Physics Letters, 2007
The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet.
C. Zhao, Y. H. Chen, B. Xu, P. Jin, Z. G. Wang   +4 more
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Droplet epitaxy and its possibilities in nano-electronics

2018 7th International Symposium on Next Generation Electronics (ISNE), 2018
In this work, we are dealing with a novel technology, called droplet epitaxy, which is useful technique when quantum dots are to be produced, of different shape and size in various densities. There are self-assembling methods to achieve quantum dot ensembles and their spatial ordering and positioning.
Nemcsics, Ákos, Ürmös, Antal, Tóth, Lajos   +2 more
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Droplet Epitaxy of InAs Nanocrystals on GaN/GaAs

Japanese Journal of Applied Physics, 2001
The growth of InAs nanocrystals fabricated on GaAs by means of droplet epitaxy in a metal-organic chemical vapour-deposition chamber was investigated. To prevent deterioration of the droplet/substrate interface a nitride passivation layer was introduced.
Ines Pietzonka, Torsten Sass, Werner Seifert, Struan Gray, Charlotte Mogensen   +4 more
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Droplet epitaxy for advanced optoelectronic materials and devices

Journal of Physics D: Applied Physics, 2014
Droplet epitaxy was proposed to fabricate quantum dots in the early 1990s. Even though many research efforts have been devoted to droplet epitaxy since then, it is only until recently that droplet epitaxy has received worldwide attention. Compared with the well-known Stranski–Krastanow (S–K) growth mode, droplet epitaxy consists of the formation and ...
Jiang Wu, Zhiming M Wang
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Complex quantum ring structures formed by droplet epitaxy

Applied Physics Letters, 2006
Well-defined complex quantum ring structures formed by droplet epitaxy are demonstrated. By varying the temperature of the crystallizing Ga droplets and changing the As flux, GaAs∕AlGaAs quantum single rings and concentric quantum double rings are fabricated, and double-ring complexes are observed.
Shesong Huang, Zhichuan Niu, Zhidan Fang, Haiqiao Ni, Zheng Gong, Jianbai Xia   +5 more
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Ordering of GaAs quantum dots by droplet epitaxy

physica status solidi (b), 2009
AbstractStep‐edge‐induced ordering of GaAs QDs was achieved on GaAs(110) by droplet epitaxy in a lattice‐matched GaAs/AlGaAs system. After the growth of an AlGaAs barrier layer, step‐edges along the 〈113〉, 〈112〉, 〈111〉, and 〈221〉 directions were naturally formed.
Takaaki Mano, Takashi Kuroda, Takeshi Noda, Kazuaki Sakoda   +3 more
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Magneto photoluminescence in droplet epitaxial GaAs quantum rings

physica status solidi (b), 2009
AbstractMaking use of a novel droplet epitaxy technique, we realize GaAs ring‐shaped quantum dots of high circular symmetry. Here, we report on photoluminescence (PL) study of single isolated quantum rings in magnetic field up to 10 T. Polarized PL signals show a significant reduction in their intensity at >6 T.
Kuroda, T, Belhadj, T, Mano, T, Urbaszek, B, Amand, T, Marie, X, SANGUINETTI, STEFANO, Sakoda, K, Koguchi, N.   +8 more
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Droplet epitaxy of zinc-blende GaN quantum dots

Journal of Crystal Growth, 2010
Abstract Zinc-blende GaN quantum dots were grown on 3C-AlN(0 0 1) by a vapor–liquid–solid process in a molecular beam epitaxy system. We were able to control the density of the quantum dots in a range of 5×10 8 –5×10 12  cm −2 . Photoluminescence spectroscopy confirmed the optical activity of the GaN quantum dots in a range of 10 11 –5×10 12  cm −2 .
T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, D.J. As   +6 more
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Origin of nanohole formation by etching based on droplet epitaxy

Nanoscale, 2014
Creating and manipulating materials at the nanoscale with controllable size, shape and nucleation site is an important task to meet the urgent demands for quantum structures with designed properties. In the last ten years, droplet epitaxy has been emerging as a versatile fabrication method for various complex nanostructures, such as quantum dots ...
Xinlei, Li, Jiang, Wu, Zhiming M, Wang, Baolai, Liang, Jihoon, Lee, Eun-Soo, Kim, Gregory J, Salamo   +6 more
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