Droplet epitaxy of semiconductor nanostructures for quantum photonic devices [PDF]
Nature Materials, 2019 26 pages, 5 ...
Massimo Gurioli +4 more
openaire +6 more sources
Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates [PDF]
Nanoscale Research Letters, 2009 We report on various self-assembled In(Ga)As nanostructures by droplet epitaxy on GaAs substrates using molecular beam epitaxy. Depending on the growth condition and index of surfaces, various nanostructures can be fabricated: quantum dots (QDs), ring ...
Wang Zh +5 more
doaj +2 more sources
Local Droplet Etching with Indium Droplets on InP(100) by Metal-Organic Vapor Phase Epitaxy. [PDF]
Cryst Growth DesThe local droplet etching (LDE) by using indium droplets on bare InP(100) surfaces is demonstrated in a metal-organic vapor phase epitaxy (MOVPE) environment for the first time. The role of an arsenic flow applied to self-assembled metallic indium droplets is systematically studied.
Sala EM, In Na Y, Heffernan J.
europepmc +4 more sources
Self-organization of quantum-dot pairs by high-temperature droplet epitaxy [PDF]
Nanoscale Research Letters, 2006 The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet ...
Wang Zhiming +4 more
doaj +2 more sources
GaAs Nanowire Growth by MBE with Catalyst Forming Eutectic Points with Both Elements [PDF]
NanomaterialsA3B5 nanowires are usually grown via the vapor-liquid-solid mechanism. Species from the vapor are incorporated into the nanowires using a catalyst droplet. Typically, the droplet is a low-melting-point eutectic alloy of catalyst and group III metal. This
Nickolay V. Sibirev +5 more
doaj +2 more sources
Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters. [PDF]
ACS Appl Nano Mater, 2022 Gajjela RSR +3 more
europepmc +2 more sources
Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy [PDF]
NanomaterialsThis study investigates the growth of gallium arsenide nanowires, using lead as a catalyst. Typically, nanowires are grown through the vapor–solid–liquid mechanism, where a key factor is the reduction in the nucleation barrier beneath the catalyst ...
Igor V. Shtrom +6 more
doaj +2 more sources
Shutter-Synchronized Molecular Beam Epitaxy for Wafer-Scale Homogeneous GaAs and Telecom Wavelength Quantum Emitter Growth [PDF]
NanomaterialsQuantum dot (QD)-based single-photon emitter devices today are based on self-assembled random position nucleated QDs emitting at random wavelengths. Deterministic QD growth in position and emitter wavelength would be highly appreciated for industry-scale
Elias Kersting +6 more
doaj +2 more sources
Post-thermal-Induced Recrystallization in GaAs/Al0.3Ga0.7As Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry [PDF]
ACS Omega, 2018 Inah Yeo +5 more
doaj +2 more sources
Nanomaterials, 2021 Modern and future nanoelectronic and nanophotonic applications require precise control of the size, shape and density of III-V quantum dots in order to predefine the characteristics of devices based on them.
Sergey V. Balakirev +4 more
doaj +1 more source