Results 21 to 30 of about 838 (183)
Droplet epitaxy quantum dot based infrared photodetectors
Nanotechnology, 2020 The fabrication and characterization of an infrared photodetector based on GaAs droplet epitaxy quantum dots embedded in Al0.3Ga0.7As barrier is reported. The high control over dot electronic properties and the high achievable number density allowed by droplet epitaxy technique permitted us to realize a device using a single dot layer in the active ...
Vichi S. +10 more
openaire +5 more sources
Erratum to: Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy [PDF]
Nanoscale Research Letters, 2010 Fedorov A +4 more
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Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics
Nanophotonics, 2023 Epitaxially grown semiconductor quantum dots (QDs) and quantum rings (QRs) have been demonstrated to be excellent sources of single photons and entangled photon pairs enabling applications within quantum photonics.
Wang Yun-Ran, Han Im Sik, Hopkinson Mark
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Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets
Nanomaterials, 2023 Site-controlled Ga droplets on AlGaAs substrates are fabricated using area-selective deposition of Ga through apertures in a mask during molecular beam epitaxy (MBE). The Ga droplets can be crystallized into GaAs quantum dots using a crystallization step
Stefan Feddersen +4 more
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Enable a Facile Size Re-distribution of MBE-Grown Ga-Droplets via In Situ Pulsed Laser Shooting
Nanoscale Research Letters, 2021 A MBE-prepared Gallium (Ga)-droplet surface on GaAs (001) substrate is in situ irradiated by a single shot of UV pulsed laser. It demonstrates that laser shooting can facilely re-adjust the size of Ga-droplet and a special Ga-droplet of extremely broad ...
Biao Geng +8 more
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Scientific Reports, 2021 We report the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation mechanism with molecular beam epitaxy.
Min Baik +6 more
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Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
Nanomaterials, 2022 We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented ...
Artur Tuktamyshev +10 more
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Nanomaterials, 2023 Coalescence of nanowires and other three-dimensional structures into continuous film is desirable for growing low-dislocation-density III-nitride and III-V materials on lattice-mismatched substrates; this is also interesting from a fundamental viewpoint.
Vladimir G. Dubrovskii
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Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires
Nanomaterials, 2020 III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle.
Vladimir G. Dubrovskii, Hadi Hijazi
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Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates
Nanomaterials, 2020 Droplet epitaxy allows the efficient fabrication of a plethora of 3D, III–V-based nanostructures on different crystalline orientations. Quantum dots grown on a (311)A-oriented surface are obtained with record surface density, with or without a wetting ...
Marco Abbarchi +3 more
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