Results 31 to 40 of about 838 (183)
Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
Nanoscale Research Letters, 2007 The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD ...
Strom NW +5 more
doaj +1 more source
AIP Advances, 2021 We report on the development of deep-ultraviolet (DUV) wavelength-selective top-illuminated photodetectors based on AlGaN/AlN quantum-dots-in-wells. Structures consisting of 100 AlGaN wells and AlN barriers were grown by plasma-assisted molecular beam ...
Pallabi Pramanik +5 more
doaj +1 more source
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A
Nanomaterials, 2020 We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature.
Artur Tuktamyshev +6 more
doaj +1 more source
Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring
Materials Research Express, 2021 GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang +3 more
doaj +1 more source
Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
AIP Advances, 2015 We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies ...
Y. C. Chang +4 more
doaj +1 more source
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
Advanced Functional Materials, EarlyView.In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source
Block Copolymers: Emerging Building Blocks for Additive Manufacturing
Advanced Functional Materials, EarlyView.This review addresses how block copolymer (BCP) physics and rheology have led to the widespread use of BCPs in advanced additive manufacturing techniques, with particular emphasis on the untapped potential of these nanostructured materials toward achieving multi‐scale architected materials with unique, programmable material properties.
Alice S. Fergerson +3 more
wiley +1 more source
Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission
Nanoscale Research Letters, 2010 In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved.
Fuster D +8 more
doaj +1 more source
Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures
Advanced Functional Materials, EarlyView.The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji +9 more
wiley +1 more source
Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates
AIP Advances, 2022 N-polar AlN epilayers were grown on the N-face of single-crystal bulk AlN substrates by plasma-assisted molecular beam epitaxy. A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature aided in removing native ...
Jashan Singhal +8 more
doaj +1 more source