Modeling of Al and Ga Droplet Nucleation during Droplet Epitaxy or Droplet Etching [PDF]
Nanomaterials, 2021 The temperature dependent density of Al and Ga droplets deposited on AlGaAs with molecular beam epitaxy is studied theoretically. Such droplets are important for applications in quantum information technology and can be functionalized e.g., by droplet ...
Christian Heyn, Stefan Feddersen
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Dynamics of mass transport during nanohole drilling by local droplet etching. [PDF]
Nanoscale Res Lett, 2015 Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assembled drilling of nanoholes into III/V semiconductor surfaces.
Heyn C +4 more
europepmc +7 more sources
Local droplet etching on InAlAs/InP surfaces with InAl droplets
AIP Advances, 2022 GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of QDs.
Xin Cao +8 more
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Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAs. [PDF]
Nanoscale Res Lett, 2016 Self-assembled nanoholes are drilled into (001) AlGaAs surfaces during molecular beam epitaxy (MBE) using local droplet etching (LDE) with Al droplets. It is known that this process requires a small amount of background arsenic for droplet material removal.
Heyn C, Zocher M, Schnüll S, Hansen W.
europepmc +4 more sources
Local Droplet Etching with Indium Droplets on InP(100) by Metal-Organic Vapor Phase Epitaxy. [PDF]
Cryst Growth DesThe local droplet etching (LDE) by using indium droplets on bare InP(100) surfaces is demonstrated in a metal-organic vapor phase epitaxy (MOVPE) environment for the first time. The role of an arsenic flow applied to self-assembled metallic indium droplets is systematically studied.
Sala EM, In Na Y, Heffernan J.
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Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature [PDF]
Nanomaterials, 2021 Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge.
Leonardo Ranasinghe +5 more
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Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots
Nanomaterials, 2022 Strain-free GaAs quantum dots (QDs) are fabricated by filling droplet-etched nanoholes in AlGaAs. Using a template of nominally identical nanoholes, the QD size is precisely controlled by the thickness of the GaAs filling layer.
Christian Heyn +7 more
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Critical Aluminum Etch Material Amount for Local Droplet-Etched Nanohole-Based GaAs Quantum Dots
CrystalsLocal droplet-etched-based GaAs quantum dots are promising candidates for high-quality single and entangled photon sources. They have excellent optical and spin properties thanks to their size, shape and nearly strain-free matrix integration.
Timo Kruck +3 more
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Droplet etching of deep nanoholes for filling with self-aligned complex quantum structures. [PDF]
Nanoscale Res Lett, 2016 Strain-free epitaxial quantum dots (QDs) are fabricated by a combination of Al local droplet etching (LDE) of nanoholes in AlGaAs surfaces and subsequent hole filling with GaAs. The whole process is performed in a conventional molecular beam epitaxy (MBE) chamber.
Küster A +6 more
europepmc +5 more sources
Telecom O-Band Quantum Dots Fabricated by Droplet Etching
CrystalsWe present a novel growth technique for fabricating low-density InAs/GaAs quantum dots that emit in the telecom O-band. This method combines local droplet etching on GaAs surfaces using gallium with Stranski–Krastanov growth initiated by InAs deposition.
Nikolai Spitzer +7 more
doaj +2 more sources