Results 21 to 30 of about 225,755 (264)
Nanohole etching in AlGaSb with Ga droplets [PDF]
We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 270°C to 500°C, allowing a wide range of tunability of the nanohole density. By leveraging the low vapor pressure of Sb, we can obtain high degree of control over droplet formation and nanohole etching steps and reveal the physics of adatom diffusion in ...
Hilska, Joonas +2 more
openaire +5 more sources
Local Droplet Etching with Indium Droplets on InP(100) by Metal-Organic Vapor Phase Epitaxy. [PDF]
The local droplet etching (LDE) by using indium droplets on bare InP(100) surfaces is demonstrated in a metal-organic vapor phase epitaxy (MOVPE) environment for the first time. The role of an arsenic flow applied to self-assembled metallic indium droplets is systematically studied.
Sala EM, In Na Y, Heffernan J.
europepmc +4 more sources
Lattice Boltzmann simulation of droplet behaviour in microfluidic devices [PDF]
We developed a lattice Boltzmann model to investigate the droplet dynamics in microfluidic devices. In our model, a stress-free boundary condition was proposed to conserve the total mass of flow system and improve the numerical stability for flows with ...
Zhang, Yonghao, Liu, Haihu
core +4 more sources
Thermally controlled widening of droplet etched nanoholes [PDF]
We describe a method to control the shape of nanoholes in GaAs (001) which combines the technique of local droplet etching using Ga droplets with long-time thermal annealing. The cone-like shape of inverted nanoholes formed by droplet etching is transformed during long-time annealing into widened holes with flat bottoms and reduced depth.
Christian Heyn +3 more
openaire +3 more sources
Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots
Strain-free GaAs quantum dots (QDs) are fabricated by filling droplet-etched nanoholes in AlGaAs. Using a template of nominally identical nanoholes, the QD size is precisely controlled by the thickness of the GaAs filling layer.
Christian Heyn +7 more
doaj +1 more source
Strain-free GaAs cone–shell quantum structures (CSQS) with widely tunable wave functions (WF) are fabricated using local droplet etching (LDE) during molecular beam epitaxy (MBE).
Christian Heyn +5 more
doaj +1 more source
Dry etching and sputtering [PDF]
Dry etching is an important process for micro- and nanofabrication. Sputtering effects can arise in two contexts within a dry-etch process. Incoming ions cause removal of volatile products that arise from the interaction between the dry-etch plasma and ...
Wilkinson, C.D.W. +3 more
core +2 more sources
Lattice Boltzmann simulation of droplet generation in a microfluidic cross-junction [PDF]
Using the lattice Boltzmann multiphase model, numerical simulations have been performed to understand the dynamics of droplet formation in a microfluidic cross-junction.
Zhang, Yonghao, Liu, Haihu
core +4 more sources
Droplet etching of deep nanoholes for filling with self-aligned complex quantum structures. [PDF]
Strain-free epitaxial quantum dots (QDs) are fabricated by a combination of Al local droplet etching (LDE) of nanoholes in AlGaAs surfaces and subsequent hole filling with GaAs. The whole process is performed in a conventional molecular beam epitaxy (MBE) chamber.
Küster A +6 more
europepmc +5 more sources
Directional Bouncing of Impacting Droplets on Non-Uniform Rough Surfaces with High Temperature [PDF]
Directional transport of high-temperature droplets enjoys broad application prospects in the fields of drag reduction and heat transfer. In this paper, two adjacent regions with different surface roughness were constructed on 304 stainless steel by laser
Sun Kuan +3 more
doaj +1 more source

