Results 11 to 20 of about 225,755 (264)

Modeling of Al and Ga Droplet Nucleation during Droplet Epitaxy or Droplet Etching. [PDF]

open access: yesNanomaterials (Basel), 2021
The temperature dependent density of Al and Ga droplets deposited on AlGaAs with molecular beam epitaxy is studied theoretically. Such droplets are important for applications in quantum information technology and can be functionalized e.g., by droplet ...
Heyn C, Feddersen S.
europepmc   +7 more sources

Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAs. [PDF]

open access: yesNanoscale Res Lett, 2016
Self-assembled nanoholes are drilled into (001) AlGaAs surfaces during molecular beam epitaxy (MBE) using local droplet etching (LDE) with Al droplets. It is known that this process requires a small amount of background arsenic for droplet material removal.
Heyn C, Zocher M, Schnüll S, Hansen W.
europepmc   +5 more sources

Dynamics of mass transport during nanohole drilling by local droplet etching. [PDF]

open access: yesNanoscale Res Lett, 2015
Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assembled drilling of nanoholes into III/V semiconductor surfaces. An essential process during LDE is the removal of the deposited droplet material from its initial position during post-growth annealing.
Heyn C   +4 more
europepmc   +6 more sources

Local droplet etching on InAlAs/InP surfaces with InAl droplets

open access: yesAIP Advances, 2022
GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of QDs.
Xin Cao   +8 more
doaj   +2 more sources

Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature [PDF]

open access: yesNanomaterials, 2021
Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge.
Leonardo Ranasinghe   +5 more
doaj   +3 more sources

Critical Aluminum Etch Material Amount for Local Droplet-Etched Nanohole-Based GaAs Quantum Dots

open access: yesCrystals
Local droplet-etched-based GaAs quantum dots are promising candidates for high-quality single and entangled photon sources. They have excellent optical and spin properties thanks to their size, shape and nearly strain-free matrix integration.
Timo Kruck   +3 more
doaj   +3 more sources

A Parametric Study of Droplet Directional Detachment on Inverted Wedge Patterns with Wettability Contrast. [PDF]

open access: yesMicromachines (Basel)
Constructing inverted wedge-shaped hydrophilic channels with a small apex angle on surfaces with wettability patterns is an effective strategy to promote efficient and complete droplet detachment, which is crucial for applications such as condensation ...
Liang D, Cui W.
europepmc   +2 more sources

Numerical Analysis of Convective Mass Transfer during Multi-Droplet Impingement on a Structured Surface in the Presence of an Adhered Liquid Film—An Application to Spray Etching of PCBs

open access: yesFluids, 2023
Multi-droplet impingement is a fundamental aspect inherent to all kinds of technical spray processes which typically aim at enhancing the convective exchange of reagents or heat at the impinged surface. In this paper, the impingement of multiple droplets
Georg Reiss   +2 more
exaly   +3 more sources

Site-control of InAs quantum dots on InP by droplet epitaxy in MOVPE. [PDF]

open access: yesNpj Nanophoton
We demonstrate a novel approach for site-controlled growth of InAs quantum dots on InP substrates emitting at telecom wavelengths, including the C-band, for quantum photonics applications. Regular nanohole arrays were defined by electron-beam lithography
Zhou G   +7 more
europepmc   +2 more sources

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