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Self-Assembly of Semiconductor Quantum Rings by Local Droplet Etching
Journal of Nanoelectronics and Optoelectronics, 2011We give an overview on the self-assembly and optical properties of strain-free semiconductor quantum rings (QRs) generated by the novel technique local droplet etching (LDE). LDE is fully compatible with conventional molecular beam epitaxy equipment and utilizes liquid metallic droplets which perform a spatially limited drilling and form nanovolcanoes ...
Ch Heyn
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Shallow surface etching of organic and inorganic compounds by electrospray droplet impact
Applied Surface Science, 2009Abstract The electrospray droplet impact (EDI) was applied to bradykinin, polyethylene terephthalate (PET), SiO2/Si, and indium phosphide (InP). It was found that bradykinin deposited on the stainless steel substrate was ionized/desorbed without the accumulation of radiation products.
Kenzo Hiraoka +2 more
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Local droplet etching of nanoholes and rings on GaAs and AlGaAs surfaces
Applied Physics Letters, 2008We study the formation of nanoholes and rings on GaAs and AlGaAs surfaces by local droplet etching (LDE) with gallium and indium. The nanohole properties are tuned by variation in etching temperature and time as well as by the etchant. Nanoholes fabricated by In LDE are larger and have an about ten times lower density compared to Ga LDE, which allows ...
A Stemmann, Ch Heyn, T Kipp
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Alloying during local droplet etching of AlGaAs surfaces with aluminium
Journal of Applied Physics, 2019Local droplet etching (LDE) drills self-assembled nanoholes into AlGaAs surfaces and represents a powerful technique for the fabrication of versatile quantum structures like quantum dots, rings, and molecules. Usually, LDE is performed at temperatures T=600−680°C if Al is used as the etching material.
Ch Heyn, Heyn Ch, Hansen W
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Scaling of the structural characteristics of nanoholes created by local droplet etching
Journal of Applied Physics, 2014We study the tuneability of nanoholes created by local droplet etching of AlGaAs surfaces with Al droplets at varied coverage θ of the deposited droplet material and process temperature T. For the contact angle of the as-grown droplets a mean value of 66° is determined, which depends neither on θ nor on T.
Ch Heyn, Heyn Ch, Hansen W
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Study on the asymmetry of nanopore in Al droplet etching
Optical and Quantum Electronics, 2021In the local droplet etching (LDE) method, the fine split structure (FSS) of quantum dots (QDs) is directly related to the shape of the nanopores formed after annealing. The formation of highly symmetrical nanoporous is the key to the preparation of GaAs/AlGaAs QDs with small FSS.
Jiaxin Shen +12 more
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Mechanism and applications of local droplet etching
Journal of Crystal Growth, 2011We give an overview on the fabrication and applications of deep nanoholes in semiconductor surfaces generated by self-assembled drilling with liquid metal droplets as etchant. The method is fully compatible with conventional molecular beam epitaxy equipment.
Ch. Heyn +6 more
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Origin of nanohole formation by etching based on droplet epitaxy
Nanoscale, 2014Creating and manipulating materials at the nanoscale with controllable size, shape and nucleation site is an important task to meet the urgent demands for quantum structures with designed properties. In the last ten years, droplet epitaxy has been emerging as a versatile fabrication method for various complex nanostructures, such as quantum dots ...
Xinlei, Li +6 more
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GaAs nanopillars by self-assembled droplet etching
Journal of Crystal Growth, 2013Abstract GaAs nanopillars are fabricated using a combination of in situ self-organized local droplet etching of nanoholes in a semiconductor surface, nanohole filling with a different material, and ex situ material selective etching. The structural properties of the pillars are studied with atomic-force microscopy.
Ch. Heyn +5 more
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Kinetic model of local droplet etching
Physical Review B, 2011The self-organized in situ drilling of nanoholes into semiconductor surfaces by using liquid metallic droplets during conventional molecular beam epitaxy represents a new degree of freedom for the design of heterostructure devices. A model of this local droplet etching is presented that is based on a core-shell droplet structure.
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