Results 71 to 80 of about 8,090 (214)

Domain engineered gallium oxide phototransistors enabling intelligent ultraviolet vision with dynamic gating

InfoMat, EarlyView.
Single‐domain Si‐doped β‐Ga2O3 thin films grown on off‐axis sapphire eliminate domain boundaries, improving transport and photogating. Gate‐pulse modulation suppresses persistent photoconductivity, yielding ultrafast response and high detectivity. Integrated into a 24 × 24 array, the devices enable high frame rate DUV imaging and energy‐efficient ...
Jae Young Kim, Byungsoo Kim, Hee A Kim, Gi Baek Nam, Hyuk Jin Kim, Yoon Jung Lee, Seung Ju Kim, Suin Yi, Yongjo Park, Ho Won Jang   +9 more
wiley   +1 more source

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

IEEE Photonics Journal, 2019
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) grown on c-plane substrates.
Huabin Yu, Qian Chen, Zhongjie Ren, Meng Tian, Shibing Long, Jiangnan Dai, Changqing Chen, Haiding Sun   +7 more
doaj   +1 more source

A Nonlinear Quantitative Model for Measuring Concentration Ratios From Raman Intensities

Journal of Raman Spectroscopy, EarlyView.
Estimating concentration from Raman intensity ratios is complicated by cross‐contributions from overlapping peaks, causing measured ratios to deviate from the linear behavior assumed in conventional quantitative models. This nonlinear method fully accounts for cross‐contributions, allowing estimation of concentration over several orders of magnitude ...
Joseph Razzell Hollis
wiley   +1 more source

Three-dimensional charge transport mapping by two-photon absorption edge transient-current technique in synthetic single-crystalline diamond

, 2019
We demonstrate the application of two-photon absorption transient current technique to wide bandgap semiconductors. We utilize it to probe charge transport properties of single-crystal Chemical Vapor Deposition (scCVD) diamond.
Dorfer, C., Hits, D., Kasmi, L., Kramberger, G., Lucchini, M., Mikuz, M., Wallny, R.   +6 more
core   +1 more source

On the Probabilistic Interpretation of the Evolution Equations with Pomeron Loops in QCD [PDF]

, 2005
We study some structural aspects of the evolution equations with Pomeron loops recently derived in QCD at high energy and for a large number of colors, with the purpose of clarifying their probabilistic interpretation.
Balitsky, Balitsky, Balitsky, Balitsky, Balitsky, Bartels, Blaizot, Blaizot, Braun, Braun, Braun, Braun, D.N. Triantafyllopoulos, E. Iancu, Enberg, Ferreiro, G. Soyez, Gardiner, Hatta, Hatta, Hatta, Iancu, Iancu, Iancu, Iancu, Iancu, Iancu, Iancu, Iancu, Iancu, Iancu, Iancu, Jalilian-Marian, Jalilian-Marian, Jalilian-Marian, Janik, Kovchegov, Kovchegov, Kovchegov, Kovner, Kovner, Kovner, Kovner, Kovner, Kuraev, Levin, Levin, Levin, Levin, Lipatov, Marquet, McLerran, McLerran, McLerran, Mueller, Mueller, Mueller, Mueller, Mueller, Mueller, Mueller, Mueller, Munier, Munier, Munier, Panja, Rummukainen, Salam, Salam, Soyez, Stasto, Triantafyllopoulos, Van Saarloos, Weigert, Weigert   +74 more
core   +1 more source

Broadband Mode Converter With Customizable Modal Ratio Leveraging Subwavelength Engineering for Advanced Multimode Silicon Photonics

Laser &Photonics Reviews, EarlyView.
This work introduces a customizable mode converter for multimode silicon photonics, enabling precise control over the conversion ratio between optical modes. The device operates across a broad wavelength range (1350–1700 nm) with 15 distinct conversion levels.
Raquel Fernández de Cabo, Alejandro Sánchez‐Sánchez, Paula Nuño Ruano, Roy Ronald Prosopio Galarza, Daniele Melati, Carlos Alonso‐Ramos, Aitor V. Velasco, David González‐Andrade   +7 more
wiley   +1 more source

Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs

AIP Advances
Aiming to enhance the internal quantum efficiency (IQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the active region based on the V-shaped quantum well (QW) and the electron-blocking layer (EBL) structure are jointly optimized ...
Jinglei Wang, Huimin Lu, Jianhua Ma, Yifan Zhu, Zihua Zhang, Tongjun Yu, Xuecheng Wei, Hua Yang, Jianping Wang   +8 more
doaj   +1 more source

Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode

IEEE Photonics Journal
Aluminium Gallium Nitride (AlGaN) based light emitting diodes (LED) are the enabling technology for compact emitters of deep ultraviolet (DUV) radiation and are in high demand for environmental and medical applications.
Friedhard Romer, Gregor Hofmann, Jakob Hopfner, Marcel Schilling, Anton Muhin, Tim Wernicke, Michael Kneissl, Bernd Witzigmann   +7 more
doaj   +1 more source

High‐Throughput Screening of Rare‐Earth Compounds as Promising Deep‐Ultraviolet Light Emitters

Materials Genome Engineering Advances, EarlyView.
A high‐throughput screening of rare‐earth compounds is conducted to identify promising deep‐ultraviolet (DUV) light emitters. With carefully designed selection criteria, Na3LuBr6 and Na3TmBr6 are identified as promising candidates. This study accelerates the development of DUV light emitters.
Xun Xu, Hongzhen Zhong, Hanpu Liang, Baiqing Zhao, Jinshan Li, Xie Zhang   +5 more
wiley   +1 more source

Design and fabrication of AlGaN-based deep-UV LED with distributed Bragg reflectors-pixel metal combined electrodes [PDF]

, 2015
由于AlGaN、AlN材料相对较高的电阻率造成深紫外发光二极管（DUVLEDs）的电流拥堵问题更为严重，通常用于改善可见光LEDs电流分布的办法并不一定适用于DUVLEDs器件。与此同时，较高的焦耳热和低内量子效率造成的非辐射热，也导致DUVLEDs的自热效应更加明显。再加之p-GaN和p-AlGaN对紫外波段光的严重吸收，以及高Al组分AlGaN材料光学各向异性显著，严重影响了DUVLEDs的出光效率。因此，在制备DUVLEDs时，需针对AlGaN材料的特殊性，对传统的器件结构加以改进。为此 ...
袁照容
core