Results 221 to 230 of about 81,648 (296)

High-efficiency broadband active metasurfaces via reversible metal electrodeposition. [PDF]

Light Sci Appl
Li Q, Kulkarni SP, Sui C, Chen TH, Yan G, Wu R, Chen W, Hung PJ, Wu X, Emersic T, Aydin K, Hsu PC.   +11 more
europepmc   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Experimental demonstration of spatiotemporal analog computation in ultrafast optics. [PDF]

Light Sci Appl
Huang J, Zhao D, Shi J, Zhang H, Wang H, Sun FW, Zhan Q, Zhu S, Huang K, Ruan Z.   +9 more
europepmc   +1 more source

Environmental Stability and Electronic Properties of Individual Flakes of Ti2CTx MXene

Advanced Electronic Materials, EarlyView.
The paper presents a synthesis of large Ti2CTx MXene flakes with sizes reaching 40 µm and examines their environmental stability and electronic behavior. It demonstrates that monolayer flakes degrade rapidly in ambient conditions, leading to semiconducting‐like behavior with low conductivity and mobility. In contrast, multilayer flakes exhibit enhanced
Md. Ibrahim Kholil, Alexey Lipatov, Saman Bagheri, Hanna Pazniak, Venera Alimova, Alexander Sinitskii   +5 more
wiley   +1 more source

Tuning Surface-Enhanced Raman Scattering (SERS) via Filling Fraction and Period in Gold-Coated Bullseye Gratings. [PDF]

Nanomaterials (Basel)
Li Z, Cheng Y, Fernandes C, Wang X, Ruda HE.   +4 more
europepmc   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

A universal all-dry microfabrication method for sensitive electronic materials via an inorganic molecular lithographic mediator. [PDF]

Nat Commun
Zeng C, Xu Y, Wei X, Liang J, Sun Z, He X, Du G, Wang S, Liu Y, Zhou X, Li Y, Liu K, Ma Y, Zhai T, Li H.   +14 more
europepmc   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

High-Throughput Fabrication of Zero-Mode Waveguide Nanoaperture Arrays with Sol-Gel Nanoimprint Lithography for Enhanced Single Molecule Fluorescence Detection. [PDF]

Small
Khelidj H, Gourdin A, Ozerov I, Moreau A, Kerzabi B, Grosso D, Wenger J.   +6 more
europepmc   +1 more source

High‐Speed Flexible Schottky Diodes Based on Carbon Nanotubes

Advanced Electronic Materials, EarlyView.
We demonstrate a flexible Schottky diode based on carbon nanotube network thin film, and the devices are fabricated via a low‐temperature process on a PI substrate, which exhibits excellent radio‐frequency characteristics, with a high responsivity 6 A/W at zero bias, a high intrinsic cut‐off frequency reaching 153 GHz, and an extrinsic cut‐off ...
Yan Li, Haoyu Zhang, Xinyi Zheng, Weifeng Wu, Xiaowei He, Li Ding, Sheng Wang   +6 more
wiley   +1 more source