Results 91 to 100 of about 767,342 (211)

Interface traps build-up and its influence on electrostatic discharge robustness of high-power metal-oxide-semiconductor field-effect transistor

Российский технологический журнал
Objectives. The aim of the study is to confirm that the robustness of high-power metal–oxide–semiconductor fieldeffect transistor (MOSFET) to electrostatic discharge (ESD) after gamma irradiation is determined by the concentration of built-up interface ...
D. M. Bakerenkova, A. S. Petrov
doaj   +1 more source

Indirect Electrostatic Discharge (ESD) Effects on Shielded Components Installed in MV/LV Substations

Energies
Standards describing the test procedures recommended to investigate the shielding effectiveness of enclosures have two major issues: they generally prescribe the assessment of the electromagnetic field of empty cavities, and they do not deal with very ...
Giuseppe Attolini, Salvatore Celozzi, Erika Stracqualursi   +2 more
doaj   +1 more source

Anti-series GGNMOS ESD clamp for space application IC's

, 2014
Low-voltage differential input circuits in space application IC's require radiation hardness, compatibility with large input common mode swings and cold sparing functionality.
Linten D., Hellings G., Vassilev V., Wouters J., Thys G., MENEGHESSO, GAUDENZIO, Griffoni A., Thijs S.   +7 more
core  

Compact potential sensor for spacecraft based on a silicon photonic waveguide

npj Nanophotonics
Satellites charge up due to incoming electrons and ions, resulting in an electrical potential difference (ΔV) between the satellite and outer space. This can cause electrostatic discharge (ESD) events, damaging electronic devices.
Kosei Otsuka, Wataru Takahama, Rikuto Hojo, Takeki Higashiguchi, Kazuya Kikunaga, Tomofumi Mogami, Kazuhiro Toyoda, Yasushi Takahashi   +7 more
doaj   +1 more source

Electrostatic discharge (ESD) improvement to reduce customer complaint

, 2010
Electrostatic discharge (ESD) / electrical over stress (EOS) factors cannot be avoided when an organization running daily manufacturing activity. ESD problems are increasing in the electronics industry because of the trends toward higher speed and ...
Rahman, Muhd Ambri, Abdul Aziz, Faieza
core   +1 more source

Compact Archimedean spiral antenna with high gain for electrostatic discharge detection

IET Microwaves, Antennas & Propagation
A compact Archimedean spiral antenna with high gain for electrostatic discharge (ESD) detection is investigated. A frustum‐shaped cavity proposed in this work is formed to optimise the maximum antenna gain.
Tong Wang, Dongwei Chen, Mingjie Li, Weidong Liu, Qingyuan Fang   +4 more
doaj   +1 more source

Electrostatic Discharge Cross Talk Attenuation in Protective

It is known that electrostatic discharge (ESD) is one of the frequent causes of integrated circuit failure and loss of spacecraft. However, the danger is not only the pulse itself but also the cross talk from it at the near (NEXT) and far (FEXT) ends. To
Georgiy Y. Kim, Alexander V. Nosov
core   +1 more source

Challenges Of Electrostatic Discharge (Esd) Protection In Emerging Silicon Nanowire Technology

, 2011
Electrostatic discharge (ESD) induced failures continue to be a major reliability concern in the semiconductor industry. Such a concern will in fact be intensified as the CMOS technology is scaling toward the 22-nm and beyond.
Cao, Guang Biao, Feng, Chia, Chang, Gung, Liou, Juin J., Chang, Jiang   +4 more
core   +1 more source

Challenges of designing electrostatic discharge (ESD) protection in modern and emerging CMOS technologies

, 2013
Electrostatic discharge (ESD) induced failures continue to be a major reliability concern in the semiconductor industry. Such a concern will in fact be intensified as the CMOS technology is scaling toward the 22-nm and beyond.
J. J. Liou, Liou, Juin J.
core   +1 more source

Temperature dependence of ESD effects on 28 nm FD‐SOI MOSFETs

Engineering Reports
The failure mechanisms caused by electrostatic discharge (ESD) effects at ambient temperatures ranging from −75 to 125°C are investigated by Silvaco TCAD simulator.
Yiping Xiao, Chaoming Liu, Yanqing Zhang, Chunhua Qi, Guoliang Ma, Tianqi Wang, Mingxue Huo   +6 more
doaj   +1 more source