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Interplay Between Structure and Interfacial Interactions in Fe‐Gd Synthetic Ferrimagnets
Advanced Electronic Materials, EarlyView.Synthetic ferrimagnets with nearly identical Gd–Fe compositions but different architectures and crystallinity were investigated by element‐resolved microscopy, structural analysis and atomistic spin simulations. The results show that Curie temperature and domain evolution are governed primarily by structural order and interface quality, demonstrating ...
Álvaro González‐García +10 more
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Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi0.4Sb0.6)2Te3. [PDF]
Nanomaterials (Basel)Gultom P +4 more
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Surfactants in epitaxial growth
Physical Review Letters, 1989We have investigated the role of surface-active species (surfactants) in heteroepitaxial growth. In general, the growth mode is determined by the balance between surface, interface, and film free energies. Thus, if A wets B, B will not wet A. Any attempt at growing an A/B/A heterostructure must overcome this fundamental obstacle.
, Copel, , Reuter, , Kaxiras, , Tromp
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Journal of Crystal Growth, 1972
Abstract In silicon vapor epitaxial growth using hydrogen reduction of SiCl 4 , it has been found that two-dimensional growth is a dominant process. The two-dimensional growth (layer growth) rate is direction dependent and very large; more than several hundreds microns per minute on a perfect (111) surface in a direction at about 1200°C under the ...
Jun-Ichi Nishizawa +2 more
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Abstract In silicon vapor epitaxial growth using hydrogen reduction of SiCl 4 , it has been found that two-dimensional growth is a dominant process. The two-dimensional growth (layer growth) rate is direction dependent and very large; more than several hundreds microns per minute on a perfect (111) surface in a direction at about 1200°C under the ...
Jun-Ichi Nishizawa +2 more
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2021
We consider an epitaxial growth model in surface science. The model equation includes an effect of surface diffusion which is described by a biharmonic operator and a roughening which caused by the Schwoebel effect. Under suitable assumptions, we show that the results reviewed in Chap. 2 are available to the model equation.
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We consider an epitaxial growth model in surface science. The model equation includes an effect of surface diffusion which is described by a biharmonic operator and a roughening which caused by the Schwoebel effect. Under suitable assumptions, we show that the results reviewed in Chap. 2 are available to the model equation.
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Materials Science and Technology, 1999
The mechanisms of epitaxial growth affect both the form of a deposit and the way in which lattice defects are introduced into the deposit.
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The mechanisms of epitaxial growth affect both the form of a deposit and the way in which lattice defects are introduced into the deposit.
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Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
Advanced Materials, 2010A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large-area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C(60) produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene ...
Jeongho, Park +8 more
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2002
Attractive dispersion forces, active between incident atoms and the substrate, cause preferential arrival of atoms on protruding parts on growing film surfaces. This phenomenon, which we refer to as “steering”, can give rise to significant flux redistribution.
Poelsema, Bene, van Dijken, Sebastiaan
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Attractive dispersion forces, active between incident atoms and the substrate, cause preferential arrival of atoms on protruding parts on growing film surfaces. This phenomenon, which we refer to as “steering”, can give rise to significant flux redistribution.
Poelsema, Bene, van Dijken, Sebastiaan
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Mechanisms of epitaxial growth
Contemporary Physics, 1987Abstract ‘Epitaxy’ means order in the relative orientation of identical crystals nucleated and grown on a large single-crystal face. Every crystal of the deposited material is oriented in such a way that there is coincidence of some vectors of its reciprocal lattice with vectors of the reciprocal lattice of the substrate surface.
I. Markov, S. Stoyanov
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Epitaxial Growth on Simox Wafers
MRS Proceedings, 1985ABSTRACTThe top silicon layer in as-implanted SIMOX wafer is usually too thin to support device fabrication. Hence, an epitaxial layer is usually grown on a SIMOX wafer after oxygen ion implantation and anneal. Because this epitaxial layer is typically very thin,less than 500 nm) and because of the material structure of the S1MOX wafer, special care ...
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