Results 241 to 250 of about 88,368 (276)
Some of the next articles are maybe not open access.
Journal of Applied Physics, 1986
Atomic layer epitaxy (ALE) is not so much a new technique for the preparation of thin films as a novel modification to existing methods of vapor-phase epitaxy, whether physical [e.g., evaporation, at one limit molecular-beam epitaxy (MBE)] or chemical [e.g., chloride epitaxy or metalorganic chemical vapor deposition (MOCVD)].
Colin H. L. Goodman, Markus V. Pessa
openaire +1 more source
Atomic layer epitaxy (ALE) is not so much a new technique for the preparation of thin films as a novel modification to existing methods of vapor-phase epitaxy, whether physical [e.g., evaporation, at one limit molecular-beam epitaxy (MBE)] or chemical [e.g., chloride epitaxy or metalorganic chemical vapor deposition (MOCVD)].
Colin H. L. Goodman, Markus V. Pessa
openaire +1 more source
Solar Cells, 1986
Abstract Epitaxial layers of CuInSe 2 and related mixed crystals were grown on different substrates by liquid phase epitaxy and molecular beam epitaxy but mainly by flash evaporation. The geometrical foundations and experimental results are discussed.
B. Schumann, A. Tempel, G. Kühn
openaire +1 more source
Abstract Epitaxial layers of CuInSe 2 and related mixed crystals were grown on different substrates by liquid phase epitaxy and molecular beam epitaxy but mainly by flash evaporation. The geometrical foundations and experimental results are discussed.
B. Schumann, A. Tempel, G. Kühn
openaire +1 more source
1988
Strained layer epitaxy is a process for the formation of new materials with a strain and composition modulation in the one to one hundred monolayer range. Two aspects of epitaxial growth are discussed in this paper. We first consider the dynamics of the clustering process, a basic limitation in epitaxy, and show that the formation of clusters can be ...
L. C. Feldman +3 more
openaire +1 more source
Strained layer epitaxy is a process for the formation of new materials with a strain and composition modulation in the one to one hundred monolayer range. Two aspects of epitaxial growth are discussed in this paper. We first consider the dynamics of the clustering process, a basic limitation in epitaxy, and show that the formation of clusters can be ...
L. C. Feldman +3 more
openaire +1 more source
Silicon Molecular Layer Epitaxy
Journal of The Electrochemical Society, 1990This paper reports on recent results of silicon molecular layer epitaxy (MLE) using and hydrogen. Growth conditions for monomolecular layers by the monomolecular layer deposition process have been investigated as a function of substrate temperature, pressure in the growth chamber, gas injection time, and vacuum evacuation time.
Jun‐ichi Nishizawa +3 more
openaire +1 more source
Applied Surface Science, 1994
Abstract For the purpose to clarify the process steps and to actualize the low temperature perfect crystal growth technique, photo-excited reactions in halide vapor phase epitaxy (VPE) and in metalorganic CVD (MO-CVD), adsorption and surface reaction processes in molecular layer epitaxy are investigated.
openaire +1 more source
Abstract For the purpose to clarify the process steps and to actualize the low temperature perfect crystal growth technique, photo-excited reactions in halide vapor phase epitaxy (VPE) and in metalorganic CVD (MO-CVD), adsorption and surface reaction processes in molecular layer epitaxy are investigated.
openaire +1 more source
Photostimulated molecular layer epitaxy
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1986The quality of GaAs epitaxial layers prepared by molecular layer epitaxy (MLE) with and without UV light irradiation was studied and appears to be a promising method for preparing the GaAs thin layers with an atomic order accuracy. Namely, single layer-by-layer growth has been realized for GaAs using AsH3 and trimethyl (TMG), and triethyl (TEG ...
Jun-ichi Nishizawa +3 more
openaire +1 more source
Current Opinion in Solid State and Materials Science, 1998
Abstract Atomic layer epitaxy is now a mature technique offering, through its self-limiting character, distinct advantages for materials processing especially when precise layer thickness control or conformal coating is needed. The technique is well suited for binary compounds and their doping but it is also applicable to more complex thin film ...
openaire +1 more source
Abstract Atomic layer epitaxy is now a mature technique offering, through its self-limiting character, distinct advantages for materials processing especially when precise layer thickness control or conformal coating is needed. The technique is well suited for binary compounds and their doping but it is also applicable to more complex thin film ...
openaire +1 more source
Defects in epitaxial gallium phosphide layers
Physica Status Solidi (a), 1971X-ray diffraction topography was used to examine cleavage faces of single and double liquid-phase epitaxial layers. Contrast effects at p-n junctions between tellurium-doped n-layers and zinc- and oxygen-doped p-layers are interpreted in terms of an interfacial array of misfit dislocations, which are associated with an ordered array of inclined ...
A. S. Brown, A. J. Springthorpe
openaire +1 more source
Piezoresistive effect in silicon epitaxial layers
Physica Status Solidi (a), 1973This note are presented some experimental results on piezoresistive properties of p-type-boron doped silicon epitazial layers grown on single-crystal n-type silicon substrates.
F. Conti +3 more
openaire +1 more source
Lattice-graded epitaxial layers
Journal of Applied Physics, 1986Lattice-graded epilayers may be grown without defects due to lattice misfit by controlling lattice constant changes and by growing the layers over curved surfaces. The critical layer thickness and the defect count of a lattice-graded layer can be related to similar quantities for a heteroepitaxial layer. The effect of the differences in coefficients of
openaire +1 more source