Results 71 to 80 of about 88,368 (276)

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

Advanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

Comparison Between Different Ways in Making Silicon Dioxide Layer on Silicon Wafers

MATEC Web of Conferences, 2017
The most important raw material for power device is epitaxial wafers, which is made from heavily doped polishing silicon wafers. In order to prevent dopant doped into silicon while pulling ingots spread into the epitaxial atmosphere and finally into the ...
Sun Chenguang, Wang Yanjun, Xu Qiang, Zhang Xuenan, Liu Zhenfu   +4 more
doaj   +1 more source

Exploiting Two‐Photon Lithography, Deposition, and Processing to Realize Complex 3D Magnetic Nanostructures

Advanced Functional Materials, EarlyView.
Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey, Arjen van den Berg, Sandra Ruiz Gomez, Claire Donnelly, Dirk Grundler, Sam Ladak   +5 more
wiley   +1 more source

Dual‐Phased Molybdenum Carbides Confined in MOF‐Derived Carbon Nanoframes Enhance Capacitive Desalination

Advanced Functional Materials, EarlyView.
Dual‐phase MoC/Mo2C/CoNC nanoframes are synthesized via a MOF‐on‐MOF strategy, demonstrating a large salt adsorption capacity, a low energy consumption, and an excellent cycling stability. In situ/ex situ characterizations and DFT calculations reveal that the MoC/Mo2C dual phase transition facilitates Na+ adsorption/desorption, while interface‐induced ...
Feifei Pang, Bohan Liu, Jingyu Wu, Qian Yang, Zhichang Xiao, Ningzhao Shang, Xiaoxian Zhao, Yusuke Yamauchi, Shuaihua Zhang   +8 more
wiley   +1 more source

Magnetic and Structural Response Tuned by Coexisting Mn Concentration‐Dependent Phases in MnBi2Te4 Thin Film Grown on GaAs(001) by Molecular Beam Epitaxy

Advanced Functional Materials, EarlyView.
The study explores structural and magnetic properties of one of the most recent topological quantum materials (MnBi2Te4). The Mn‐poor structure leads to stacking faults (quintuple layer ‐ QL of Bi2Te3 formation instead of a septuple layer ‐ SL of MnBi2Te4), resulting in a coexistence between weak antiferromagnetism and ferromagnetism.
Wesley F. Inoch, Sergio L. A. Mello, Gilberto Rodrigues‐Junior, Sukarno O. Ferreira, Marcelo M. Sant'Anna, Benjamin R. Salles, Mateus T. Souza, Sérgio L. Morelhão, Maybi F. Sampaio, Bráulio S. Archanjo, Leonarde N. Rodrigues   +10 more
wiley   +1 more source

Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells [PDF]

, 2002
A four-junction cell design consisting of InGaAs, InGeAsP, GaAs, and Ga0.5In0.5P subcells could reach 1 x AMO efficiencies of 35.4%. but relies on the integration of non-lattice-matched materials.
Ahn, Chang-Geun, Atwater, Harry A., Chu, Charles, Fontcuberta i Morral, Anna, Iles, Peter A., Wanlass, Mark W., Zahler, James M.   +6 more
core  

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Upward ferroelectric self-poling in (001) oriented PbZr0.2Ti0.8O3 epitaxial films with compressive strain

AIP Advances, 2013
Upward self-poling phenomenon was observed in PbZr0.2Ti0.8O3 ferroelectric films which were grown on (001) SrTiO3 substrate with either p-type La0.7Sr0.3MnO3 or n-type SrRuO3 buffered layer, or on n-type (001) Nb-SrTiO3 substrate. Both upward self-poling
Ying Luo, Xueyan Li, Lei Chang, Wenxiu Gao, Guoliang Yuan, Jiang Yin, Zhiguo Liu   +6 more
doaj   +1 more source

Oscillatory behavior of spin current transmission in epitaxial NiO(001) films with Pt underlayer thickness [PDF]

APL Materials
We observe a non-trivial oscillatory behavior in spin current transmission through antiferromagnetic epitaxial NiO(001) films, realized in Pt/NiO/CoFeB trilayers by varying the thickness of the Pt underlayer (tPt).
Junwei Gu, Takumi Yamazaki, Takeshi Seki
doaj   +1 more source

Growth of strontium ruthenate films by hybrid molecular beam epitaxy

, 2017
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen.
Ahadi, Kaveh, Kim, Honggyu, Marshall, Patrick B., Stemmer, Susanne   +3 more
core   +2 more sources