Results 81 to 90 of about 88,368 (276)
Grain Boundary Space Charge Engineering of Solid Oxide Electrolytes: Model Thin Film Study
This study demonstrates unprecedented control of grain boundary electrical properties in solid electrolytes. Selective diffusion of cations through grain boundaries in thin films enables 12 orders of magnitude variation in ionic resistance, proving that systematic chemical modification of grain boundary electrical properties is feasible.
Thomas Defferriere +5 more
wiley +1 more source
In solidly mounted resonator (SMR) type of bulk acoustic wave resonator, it is difficult to fabricate single crystalline piezoelectric thin films in a bottom-up process due to the amorphous SiO _2 in the low acoustic impedance layer of the acoustic Bragg
Satoshi Tokai, Takahiko Yanagitani
doaj +1 more source
Growth of Millimeter‐Sized BaTaO2N Single Crystals by an NH3‐Assisted BaCl2 Flux Method
Millimeter‐sized BaTaO2N single crystals are successfully grown from a BaCl2 flux under NH3 flow. Their comprehensive characterization, including dielectric properties, is demonstrated, and the possible growth mechanisms are discussed. Abstract Perovskite‐type oxynitrides have attracted considerable attention due to their excellent photocatalytic ...
Ginji Harada +2 more
wiley +1 more source
Clean Si(111)-(7{x7) surfaces, followed by air-exposure, have been investigated by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM).
Anupam Roy +52 more
core +1 more source
An innovative combination of size‐controlled template synthesis, partial cation exchange reactions, and dual shell passivation offers a new class of RoHS‐compliant, heavy metal‐free Cu‐Zn‐In‐Se/ZnS/Al2O3 core/shell/shell quantum dots (QDs), exhibiting long‐range tunability, highly efficient SWIR emission with remarkably narrow photoluminescence ...
Avijit Saha +8 more
wiley +1 more source
This work addresses a novel technique for selecting the best process parameters for the 4H–SiC epitaxial layer in a horizontal hot-wall chemical vapor reactor using a transient multi-physical (thermal-fluid-chemical) simulation model and combined with a ...
Zhuorui Tang +7 more
doaj +1 more source
Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits
We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001) Al2O3 substrates.
K.-H. Cho +10 more
doaj +1 more source
Epitaxial graphene on SiC(0001): More than just honeycombs
The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of graphene, with ...
Li, L. +4 more
core +1 more source
Self‐Trapped Hole Migration and Defect‐Mediated Thermal Quenching of Luminescence in α‐ and β‐Ga2O3
Temperature‐dependent photoluminescence and first‐principles calculations reveal self‐trapped hole migration as the microscopic origin of thermal quenching in α‐ and β‐Ga2O3. The low migration barrier in α‐Ga2O3 enables defect trapping and enhances blue luminescence, while the higher barrier in β‐Ga2O3 preserves ultraviolet emission at elevated ...
Nima Hajizadeh +11 more
wiley +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source

