Results 281 to 290 of about 138,462 (342)
Supercritical Ge Layers on Si(001) Grown By Ultra-Low-Temperature Molecular Beam Epitaxy
Wilflingseder, Christoph
openalex +1 more source
Visualizing Nanoscale Charge Flows in Multi-Dimensional WSe2/GaAs Vertical Diodes
Piazza V +6 more
europepmc +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
MRS Proceedings, 1981
The formation and structures of epitaxial CoSi2, NiSi2, Pd2 Si and PtSi films on silicon are reviewed. Polycrystalline films of reasonable epitaxial quality can be grown with sharp interfaces on Si(111) by conventional deposition and heating techniques. The interfaces on (100) substrates, however, are faceted.
R.T. Tung +4 more
openaire +1 more source
The formation and structures of epitaxial CoSi2, NiSi2, Pd2 Si and PtSi films on silicon are reviewed. Polycrystalline films of reasonable epitaxial quality can be grown with sharp interfaces on Si(111) by conventional deposition and heating techniques. The interfaces on (100) substrates, however, are faceted.
R.T. Tung +4 more
openaire +1 more source
AT&T Technical Journal, 1980
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
openaire +2 more sources
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
openaire +2 more sources
Epitaxial strain and epitaxial bending
Surface Science, 1996The relation between the curvatures of an epitaxial film-substrate system and the epitaxial strain in the film is generalized to an arbitrary substrate surface of an arbitrary crystal structure. The determination of elastic constants of epitaxial film material from curvature measurements is compared with the determination from bulk perpendicular strain
openaire +1 more source
Physical Review Letters, 2000
Dislocation networks observed in CoSi (2) islands grown epitaxially on Si are compared with the results of dislocation-dynamics calculations. The calculations make use of the fact that image forces play a relatively minor role compared to line tension forces and dislocation-dislocation interactions.
X H, Liu, F M, Ross, K W, Schwarz
openaire +2 more sources
Dislocation networks observed in CoSi (2) islands grown epitaxially on Si are compared with the results of dislocation-dynamics calculations. The calculations make use of the fact that image forces play a relatively minor role compared to line tension forces and dislocation-dislocation interactions.
X H, Liu, F M, Ross, K W, Schwarz
openaire +2 more sources