Results 21 to 30 of about 138,462 (342)

The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)

, 2003
The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries form on Si(001)
Bedrossian, Bedrossian, Bronikowski, Chadi, Chey, Chey, Chey, Ehrlich, Feil, Hamers, Hoeven, J.-Y. Ji, J.C. Kim, J.R. Tucker, J.S. Kline, Kern, Kim, Kyuno, Poate, Politi, Schwoebel, Spitzmüller, T.-C. Shen, Uesugi, Van Nostrand, Van Nostrand, Yao, Zandvliet, Zandvliet, Zandvliet, Zhang, Zoethout   +31 more
core   +1 more source

Transmission Electron Microscopy on Interface Engineered Superconducting Thin Films [PDF]

, 2003
Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films.
Bals, Sara, Blank, Dave H.A., Huijben, Mark, Leca, Victor, Rijnders, Guus, Tendeloo, Gustaav van   +5 more
core   +3 more sources

Effect of annealing temperature on the morphology, structure, and optical properties of nanostructured SnO(x) films

Materials Research Express, 2020
Nanostructured SnO(x) films were obtained by molecular beam epitaxy (MBE). The morphology, structure, and optical properties of obtained films annealed in the temperature range of 200 °C–1000 °C were studied.
Vyacheslav A Timofeev, Vladimir I Mashanov, Alexandr I Nikiforov, Ivan A Azarov, Ivan D Loshkarev, Ilya V Korolkov, Tatyana A Gavrilova, M Yu Yesin, Igor A Chetyrin   +8 more
doaj   +1 more source

Control of InGaAs facets using metal modulation epitaxy (MME)

, 2014
Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned features.
Baraskar, Ashish K., Burek, Greg J., Gossard, Arthur C., Kim, Eunji, McIntyre, Paul C., Rodwell, Mark J. W., Shin, Byungha, Singisetti, Uttam, Wistey, Mark A.   +8 more
core   +1 more source

Phase transformation characteristics of barium strontium titanate films on anisotropic substrates with (001)//(001) epitaxy [PDF]

, 2008
The role of anisotropic misfit strains on the spontaneous polarization of (100) oriented Ba0.6Sr0.4TiO3 thin films on (100) orthorhombic substrates is theoretically analyzed.
Akcay, Gursel, Alpay, Pamir, Misirlioglu, Burc, Mısırlıoğlu, Burç   +3 more
core   +1 more source

Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate

Nanomaterials
The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy.
Dmitrii V. Gulyaev, Demid S. Abramkin, Dmitriy V. Dmitriev, Alexander I. Toropov, Eugeniy A. Kolosovsky, Sergey A. Ponomarev, Nina N. Kurus, Ilya A. Milekhin, Konstantin S. Zhuravlev   +8 more
doaj   +1 more source

Elemental boron doping behavior in silicon molecular beam epitaxy [PDF]

, 1991
Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C.
C. P. Parry, E. H. C. Parker, Jackman T. E., Kubiak R. A. A., M. G. Dowsett, Narozny P., P. Augustus, R. A. A. Kubiak, R. D. Barlow, S. M. Newstead, T. E. Whall   +10 more
core   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source

TSF-MOCVD – a novel technique for chemical vapour deposition on oxide thin films and layered heterostructures

Конденсированные среды и межфазные границы, 2021
A new principle for supplying volatile precursors to MOCVD gas-phase chemical deposition systems is proposed, based on a two-stage evaporation of an organic solution of precursors from a soaked cotton thread, which passes sequentially through the zones ...
Andrey R. Kaul, Roy R. Nygaard, Vadim Yu. Ratovskiy, Alexander L. Vasiliev   +3 more
doaj   +1 more source

Applications of remote epitaxy and van der Waals epitaxy

Nano Convergence, 2023
AbstractEpitaxy technology produces high-quality material building blocks that underpin various fields of applications. However, fundamental limitations exist for conventional epitaxy, such as the lattice matching constraints that have greatly narrowed down the choices of available epitaxial material combinations.
Ilpyo Roh, Seok Hyeon Goh, Yuan Meng, Justin S. Kim, Sangmoon Han, Zhihao Xu, Han Eol Lee, Yeongin Kim, Sang-Hoon Bae   +8 more
openaire   +3 more sources