Results 21 to 30 of about 103,571 (282)
In situ real-time analysis of alloy film composition and segregation dynamics with parallel detection reflection electron energy loss spectroscopy [PDF]
Real-time measurements of GexSi1 – x/Si(001) composition and segregation dynamics in Sn/Si(001) in molecular beam epitaxy are demonstrated using parallel detection reflection electron energy loss spectroscopy.
Ahn, C. C. +6 more
core +1 more source
Nanostructured SnO(x) films were obtained by molecular beam epitaxy (MBE). The morphology, structure, and optical properties of obtained films annealed in the temperature range of 200 °C–1000 °C were studied.
Vyacheslav A Timofeev +8 more
doaj +1 more source
The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)
The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries form on Si(001)
Bedrossian +31 more
core +1 more source
SiGeC alloy layer formation by high-dose C + implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100) [PDF]
Dual-energy carbon implantation (1 × 1016/cm2 at 150 and at 220 keV) was performed on 260-nm-thick undoped metastable pseudomorphic Si(100)/ Ge0.08Si0.92 with a 450-nm-thick SiO2 capping layer, at either room temperature or at 100 °C.
Atwater, H. +5 more
core +1 more source
Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate
The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy.
Dmitrii V. Gulyaev +8 more
doaj +1 more source
Structure and magnetism of orthorhombic epitaxial FeMnAs [PDF]
The molecular beam epitaxy growth of Fe on MnAs/GaAs(001) leads to the formation of an epitaxial FeMnAs phase at the Fe/MnAs interface. The investigation of the structure by high angle annular dark field imaging in a scanning transmission electron ...
Demaille, Dominique +7 more
core +3 more sources
Band Alignment in In‐Oxo Metal Porphyrin SURMOF Heterojunctions
Porphyrin core metalation in indium‑oxo SURMOFs enables systematic tuning of band edge positions without altering the crystal structure. First‑principles calculations reveal type‑I and type‑II heterostructures as well as multi‑junction energy cascades, establishing a modular strategy for exciton funneling and charge separation in optoelectronic ...
Puja Singhvi, Nina Vankova, Thomas Heine
wiley +1 more source
A new principle for supplying volatile precursors to MOCVD gas-phase chemical deposition systems is proposed, based on a two-stage evaporation of an organic solution of precursors from a soaked cotton thread, which passes sequentially through the zones ...
Andrey R. Kaul +3 more
doaj +1 more source
Applications of remote epitaxy and van der Waals epitaxy
AbstractEpitaxy technology produces high-quality material building blocks that underpin various fields of applications. However, fundamental limitations exist for conventional epitaxy, such as the lattice matching constraints that have greatly narrowed down the choices of available epitaxial material combinations.
Ilpyo Roh +8 more
openaire +3 more sources
A previously unreported coordination motif stabilising single Fe atoms by indigo chelation and pyridyl coordination on Au(111) has been revealed. By using planar tritopic pyridyl linkers (TPyB), extended 2D porous networks of indigo3(TPyB)2Fe6 form. These networks can be crystalline or vitreous and offer an environment where individual coordination ...
Hongxiang Xu +9 more
wiley +1 more source

