Results 51 to 60 of about 1,656 (151)
MEMS‐Based Magnetoelectric Antennas for Wireless Power Transmission in Brain‐Implantable Devices
Magnetoelectric (ME) antennas allow the minimization of the invasiveness of brain implantable devices, via powering wirelessly systems able to actuate neural tissue. In order to achieve the necessary power efficiency transmission, the choice of the materials and the system assembly is vital.
Laura Mazón‐Maldonado +5 more
wiley +1 more source
Fabrication of Bulk Acoustic Wave Resonator with Multilayer Graphene Electrode
Herein, multilayer graphene structures are grown on the silicon substrate for the fabrication of the bulk acoustic wave resonator device. The result reveals that both methods can be used to replace the Bragg reflector. Two bulk acoustic wave resonator (BAW) devices with multilayer graphene as bottom electrodes are fabricated using the chemical vapor ...
Yuxuan Wang +3 more
wiley +1 more source
A low noise 0.9GHz FBAR clock consisting of an oscillator and divider circuit for single sided-to-differential conversion for high-speed A/D-converter was designed, realized with an in-house FBAR and a commercial 0.35 /spl mu/m CMOS process, and tested ...
Åberg, Markku +9 more
core +1 more source
A ± 1.55ppm Stable FBAR Reference Clock with Oven-Controlled Temperature Compensation
We present an oven-controlled FBAR oscillator that achieves a frequency stability of +/-1.55ppm from -5°C to 85°C. The highly integrated system includes a 0.64mm2 FBAR chip with integrated heater and sensor resistors and a 3 mm2 CMOS chip with the ...
Jabeom Koo +3 more
doaj +1 more source
The study compares high overtone bulk acoustic wave resonators (HBAR) using fiber‐textured and epitaxial Al0.7Sc0.3N/Mo/AlN stacks on Si(111). HBAR fabricated using an epitaxial stack show superior performance, with 25% higher figure of merit due to improved crystal quality and piezoelectric response.
Balasubramanian Sundarapandian +6 more
wiley +1 more source
The Rise of Refractory Transition‐Metal Nitride Films for Advanced Electronics and Plasmonics
Transition‐metal nitrides (TMNs) are exceptional materials with high stability, biocompatibility, and semiconductor integration, which have been extensively employed in various fields. However, the epitaxial growth of TMN films remains a challenge. The absence of high‐quality TMNs limits the understanding of their condensed matter physics and hinders ...
Jiachang Bi +3 more
wiley +1 more source
FlexMEMS-enabled hetero-integration for monolithic FBAR-above-IC oscillators
In this work, a monolithic oscillator chip is heterogeneously integrated by a film bulk acoustic resonator (FBAR) and a complementary metal-oxide-semiconductor (CMOS) chip using FlexMEMS technology.
Chuanhai Gao, Menglun Zhang, Yuan Jiang
doaj +1 more source
The Role of Silicon Technology in Organ‐On‐Chip: Current Status and Future Perspective
This review explores the potential of silicon micro‐nanofabrication technologies in advancing organ‐on‐chip systems. The integration of actuation and sensing modalities, highlight emerging technologies is discussed for combining silicon‐based and polymer‐based components, and emphasize the need for robust, high‐throughput, and customizable organ‐on ...
Frøydis Sved Skottvoll +2 more
wiley +1 more source
FBAR Resonators with Sufficient High Q for RF Filter Implementation
Film Bulk Acoustic Wave Resonators (FBAR) at 2.6GHz using AlN piezoelectric material have been fabricated and characterized in this work. A stack of Al bottom electrode, AlN layer and top Al electrode is used to excite the thickness extensional (TE ...
Ming Lin Julius Tsai +3 more
core +1 more source
Full Wave Simulation and Design of Film Bulk Acoustic Wave Filters
In order to simulate the frequency response of thin film bulk acoustic wave filter accurately, the MBVD model of film bulk acoustic wave filter chip and three dimension electro-magnetic model of package were respectively established.
Bo Du +4 more
doaj +1 more source

