Results 51 to 60 of about 1,656 (151)

MEMS‐Based Magnetoelectric Antennas for Wireless Power Transmission in Brain‐Implantable Devices

open access: yesAdvanced Materials Technologies, Volume 11, Issue 3, 5 February 2026.
Magnetoelectric (ME) antennas allow the minimization of the invasiveness of brain implantable devices, via powering wirelessly systems able to actuate neural tissue. In order to achieve the necessary power efficiency transmission, the choice of the materials and the system assembly is vital.
Laura Mazón‐Maldonado   +5 more
wiley   +1 more source

Fabrication of Bulk Acoustic Wave Resonator with Multilayer Graphene Electrode

open access: yesphysica status solidi (b), Volume 262, Issue 12, December 2025.
Herein, multilayer graphene structures are grown on the silicon substrate for the fabrication of the bulk acoustic wave resonator device. The result reveals that both methods can be used to replace the Bragg reflector. Two bulk acoustic wave resonator (BAW) devices with multilayer graphene as bottom electrodes are fabricated using the chemical vapor ...
Yuxuan Wang   +3 more
wiley   +1 more source

Low noise 0.9 GHz FBAR clock

open access: yes, 2005
A low noise 0.9GHz FBAR clock consisting of an oscillator and divider circuit for single sided-to-differential conversion for high-speed A/D-converter was designed, realized with an in-house FBAR and a commercial 0.35 /spl mu/m CMOS process, and tested ...
Åberg, Markku   +9 more
core   +1 more source

A ± 1.55ppm Stable FBAR Reference Clock with Oven-Controlled Temperature Compensation

open access: yesJournal of Electrical and Computer Engineering, 2018
We present an oven-controlled FBAR oscillator that achieves a frequency stability of +/-1.55ppm from -5°C to 85°C. The highly integrated system includes a 0.64mm2 FBAR chip with integrated heater and sensor resistors and a 3 mm2 CMOS chip with the ...
Jabeom Koo   +3 more
doaj   +1 more source

Epitaxial and Fiber‐Textured Stacks of Al0.7Sc0.3N/Mo/AlN Prepared by Magnetron Sputter Epitaxy for Bulk Acoustic Wave Devices: A Comparison using High Overtone Bulk Acoustic Wave Resonator

open access: yesphysica status solidi (a), Volume 222, Issue 16, August 2025.
The study compares high overtone bulk acoustic wave resonators (HBAR) using fiber‐textured and epitaxial Al0.7Sc0.3N/Mo/AlN stacks on Si(111). HBAR fabricated using an epitaxial stack show superior performance, with 25% higher figure of merit due to improved crystal quality and piezoelectric response.
Balasubramanian Sundarapandian   +6 more
wiley   +1 more source

The Rise of Refractory Transition‐Metal Nitride Films for Advanced Electronics and Plasmonics

open access: yesAdvanced Materials Interfaces, Volume 12, Issue 12, June 23, 2025.
Transition‐metal nitrides (TMNs) are exceptional materials with high stability, biocompatibility, and semiconductor integration, which have been extensively employed in various fields. However, the epitaxial growth of TMN films remains a challenge. The absence of high‐quality TMNs limits the understanding of their condensed matter physics and hinders ...
Jiachang Bi   +3 more
wiley   +1 more source

FlexMEMS-enabled hetero-integration for monolithic FBAR-above-IC oscillators

open access: yesNanotechnology and Precision Engineering, 2019
In this work, a monolithic oscillator chip is heterogeneously integrated by a film bulk acoustic resonator (FBAR) and a complementary metal-oxide-semiconductor (CMOS) chip using FlexMEMS technology.
Chuanhai Gao, Menglun Zhang, Yuan Jiang
doaj   +1 more source

The Role of Silicon Technology in Organ‐On‐Chip: Current Status and Future Perspective

open access: yesAdvanced Materials Technologies, Volume 10, Issue 9, May 6, 2025.
This review explores the potential of silicon micro‐nanofabrication technologies in advancing organ‐on‐chip systems. The integration of actuation and sensing modalities, highlight emerging technologies is discussed for combining silicon‐based and polymer‐based components, and emphasize the need for robust, high‐throughput, and customizable organ‐on ...
Frøydis Sved Skottvoll   +2 more
wiley   +1 more source

FBAR Resonators with Sufficient High Q for RF Filter Implementation

open access: yes, 2011
Film Bulk Acoustic Wave Resonators (FBAR) at 2.6GHz using AlN piezoelectric material have been fabricated and characterized in this work. A stack of Al bottom electrode, AlN layer and top Al electrode is used to excite the thickness extensional (TE ...
Ming Lin Julius Tsai   +3 more
core   +1 more source

Full Wave Simulation and Design of Film Bulk Acoustic Wave Filters

open access: yesMATEC Web of Conferences, 2018
In order to simulate the frequency response of thin film bulk acoustic wave filter accurately, the MBVD model of film bulk acoustic wave filter chip and three dimension electro-magnetic model of package were respectively established.
Bo Du   +4 more
doaj   +1 more source

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