Results 181 to 190 of about 1,280 (239)
Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors. [PDF]
Niu J, Kim D, Li J, Lyu J, Lee Y, Lee S.
europepmc +1 more source
Low-power edge detection based on ferroelectric field-effect transistor. [PDF]
Chen J +16 more
europepmc +1 more source
Scalable Complementary FeFET CAM Design
CAMs are frequently employed for data-centric applications. They offer excellent parallelism. Traditionally, they were implemented using the area-consuming SRAM. Recent advancements suggest using compact nonvolatile memories (NVMs) to create CAM cells to
Omar Bekdache +5 more
openaire +3 more sources
Some of the next articles are maybe not open access.
Related searches:
Related searches:
PZT Based MFS Structure for FeFET
Integrated Ferroelectrics, 2003Fabrication and properties of lead zirconate titanate (PZT) thin films have been studied for Metal-Ferroelectric-Semiconductor FET (MFSFET) devices. PZT based MFS capacitors using lead titanate (PT) as seeding layers have been respectively prepared on p-type ⟨111⟩ and n-type ⟨100⟩ silicon wafers directly by a sol-gel method.
Zhi-Jian Li +2 more
exaly +2 more sources
On the Reliability of FeFET On-Chip Memory
IEEE Transactions on Computers, 2022FeFET is a promising technology for non-volatile on-chip memories. It is rapidly attracting an ever-increasing attention from industry. The advantage of FeFETs is full compatibility with the existing CMOS process beside their low power consumption. To enable ultra-dense memories, 1-FeFET AND arrays were proposed in which a memory cell is formed from a ...
Paul R. Genssler +3 more
openaire +2 more sources
Variability sources and reliability of 3D — FeFETs
2021 IEEE International Reliability Physics Symposium (IRPS), 2021Discovery of ferroelectricity (FE) in binary oxides enables the advent of FE memories and a plethora of novel CMOS compatible building blocks spanning from the logic domain to high-density storage and neuromorphic computing. In this paper we develop the first comprehensive model of vertical Ferroelectric Field Effect Transistor, V-FeFET, to identify ...
Pesic M. +12 more
openaire +2 more sources
Computing in memory with FeFETs
Proceedings of the International Symposium on Low Power Electronics and Design, 2018Data transfer between a processor and memory frequently represents a bottleneck with respect to improving application-level performance. Computing in memory (CiM), where logic and arithmetic operations are performed in memory, could significantly reduce both energy consumption and computational overheads associated with data transfer.
Dayane Alfenas Reis +2 more
openaire +2 more sources
FeFETs for Neuromorphic Systems
2020Neuromorphic engineering represents one of the most promising computing paradigms for overcoming the limitations of the present-day computers in terms of energy efficiency and processing speed. While traditional neuromorphic circuits are based on complementary metal oxide semiconductor (CMOS) transistors and large capacitors, the recently emerging ...
Halid Mulaosmanovic +2 more
openaire +1 more source
FeFET and NCFET for Future Neural Networks: Visions and Opportunities
2021 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2021The goal of this special session paper is to introduce and discuss different emerging technologies for logic circuitry and memory as well as new lightweight architectures for neural networks. We demonstrate how the ever-increasing complexity in Artificial Intelligent (AI) applications, resulting in an immense increase in the computational power ...
Mikail Yayla +5 more
openaire +1 more source

