Results 41 to 50 of about 69,293 (324)

Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan   +11 more
wiley   +1 more source

Development of a sensor for corona current measurement under high-voltage direct-current transmission lines

open access: yesInternational Journal of Distributed Sensor Networks, 2016
A sensor-based distributed measurement system is designed for collecting and monitoring the corona current under the extremely high-voltage direct-current transmission lines.
Encheng Xin, Haiwen Yuan
doaj   +1 more source

Field Programmable Gate Array Reliability Analysis Using the Dynamic Flowgraph Methodology

open access: yesNuclear Engineering and Technology, 2016
Field programmable gate array (FPGA)-based systems are thought to be a practical option to replace certain obsolete instrumentation and control systems in nuclear power plants.
Phillip McNelles, Lixuan Lu
doaj   +1 more source

True Random Number Generator Based on Fibonacci-Galois Ring Oscillators for FPGA

open access: yesApplied Sciences, 2021
Random numbers are widely employed in cryptography and security applications. If the generation process is weak, the whole chain of security can be compromised: these weaknesses could be exploited by an attacker to retrieve the information, breaking even
Pietro Nannipieri   +6 more
doaj   +1 more source

Carbon Nanotube 3D Integrated Circuits: From Design to Applications

open access: yesAdvanced Functional Materials, EarlyView.
As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu   +3 more
wiley   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

open access: yesAdvanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai   +8 more
wiley   +1 more source

FPGA Implementation of Spectral Subtraction for In-Car Speech Enhancement and Recognition [PDF]

open access: yes, 2008
The use of speech recognition in noisy environments requires the use of speech enhancement algorithms in order to improve recognition performance. Deploying these enhancement techniques requires significant engineering to ensure algorithms are realisable
Deo, Kapeel   +3 more
core   +2 more sources

Integration of Perovskite/Low‐Dimensional Material Heterostructures for Optoelectronics and Artificial Visual Systems

open access: yesAdvanced Functional Materials, EarlyView.
Heterojunctions combining halide perovskites with low‐dimensional materials enhance optoelectronic devices by enabling precise charge control and improving efficiency, stability, and speed. These synergies advance flexible electronics, wearable sensors, and neuromorphic computing, mimicking biological vision for real‐time image analysis and intelligent
Yu‐Jin Du   +11 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Digital model of TiO(2) memristor for field-programmable gate array

open access: yesThe Journal of Engineering, 2014
A digital model which imitates the behaviour of a TiO(2) memristor as a new block in Alter DSP Builder is proposed in this Letter. The proposed model can be used as an independent memristor unit working with other units for designing memristor circuits ...
Guangyi Wang, Dandan Bai, Xiaoyuan Wang
doaj   +1 more source

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